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Способ раздельного определения сопротивлений образца высокоомного полупроводника и контактов к образцу
Известия высших учебных заведений. Материалы электронной техники. 2013. № 4. С. 63–66.
Lysenko A. P., Grigoryev F. I., Golubiatnikov V. A., Strogankova N. I., Шадов М. Б., Белов А. Г.
The method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method described is applicable to high-ohmic semiconductor samples: semiinsulating gallium arsenide, detector cadmium-zinc telluride (CZT), etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energy exceeding band gap width of investigated material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the straight-line part of this dependence. The extrapolation of this linear part to ordinate axis gives cut-off current value. As bias voltage is known, it is easy to calculate sample volume resistance value. Afterwards, using dark current value, it is possible to determine total contact resistance.
Keywords: высокоомный полупроводникseparate determinationresistance of the sample volumecontact resistancehigh-resistance semiconductorsample-two-poleillumination near-contact regionsраздельное определениесопротивление объёма образцасопротивление контактовобразец-двухполюсникзасветка приконтактных областей
Гущина В. А., / Series chemrxiv-2023-vpzhz-v2 "ChemRxiv". 2023.
All-inorganic perovskite CsPbBr3 and Cs4PbBr6 nanoparticles are being intensively studied due to their unique properties and wide range of applications; however, however, the nature of their optical properties is not yet fully understood due to the difficulty of synthesis of singlephase nanoparticles. In this article we describe the features of the synthesis of single-phase particles ...
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A comparison of methods for constructing mathematical models of electrical contacts for studying the formation of contact radio interference is carried out. In particular, three main models of contact resistance control are considered, as well as their analysis and recommendations for their use in solving the problem of predicting contact radio interference are proposed. ...
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Korneeva Y. P., Dryazgov M. A., Porokhov N. V. et al., Superconductor Science and Technology 2024 Vol. 37 No. 10 Article 105009
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Sanina N., Isaeva U., Utenyshev A. et al., Inorganica Chimica Acta 2021 Vol. 527 Article 120559
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Lysenko A. P., Белов А. Г., Каневский В. Е. et al., Известия высших учебных заведений. Физика 2017 Т. 60 № 12 С. 142–149
The phenomenon of photoconductivity has long been well studied. However, in the overwhelming majority of studies, the photoconductivity of semiconductors was studied by illuminating the entire surface of the samples. In this paper we investigated the effect of local illumination, which ensures a high level of injection of free charge carriers on the conductivity of ...
Added: December 25, 2017
Golubiatnikov V. A., Grigoryev F. I., Lysenko A. P. et al., Modern Electronic Materials 2015 Vol. 1 No. 3 P. 93–96
A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT), etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band ...
Added: May 11, 2016
Lysenko A. P., Golubiatnikov V. A., Grigoryev F. I. et al., В кн.: XXIII Международная научно-техническая конференция по фотоэлектронике и приборам ночного видения 28-30 мая 2014, Москва, Россия.: М.: ОАО "НПО "Орион", 2014. Гл. 64 С. 441–444.
It is known that illumination of the sample vysokomnogo semiconductor material significantly changes its electrical properties. It is shown that the contact regions of the sample illumination with monochromatic radiation intensity adjustable with a photon energy greater than the width of the forbidden zone of the test material, reduces the resistance of the sample, in ...
Added: October 22, 2014
Lysenko A. P., Grigoryev F. I., Strogankova N. I. et al., Instruments and Experimental Techniques 2014 Vol. 57 No. 3 P. 326–329
Abstract—It is shown that illumination of ohmic contacts to highresistance cadmium telluride and gallium arsenide samples affects not only the transient resistance of the contact, but the bulk conductivity of samples by increasing the concentration of free charge carriers. The model explaining the increase in the volume con ductivity of the sample under the illumination ...
Added: May 19, 2014
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The attempt is made to decrease transition resistance of ohmic contacts to high-ohmic semiconductors (such as cadmium telluride and semi-insulating gallium arsenide) due to extra free carrier concentration creating in near-contact region by optical stimulation. Various tested construction variants of such contacts are presented in this paper. The illumination is shown to be useful for ...
Added: January 29, 2014