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Membrane-integrated planar Schottky diodes for waveguide mm-wave detectors
СВЧ-техника и телекоммуникационные технологии, Россия. 2021. No. 3. P. 34–34.
We report on the technology of membrane-integrated planar Schottky diodes intended for use as part of waveguide mm-Wave detectors. The diode fabrication process mainly relies on selective etching of GaAs enabling the implementation of both a metallic suspended bridge terminated by a microscale Schottky contact to n-GaAs and a 140-200 μm thick SI-GaAs membrane underneath. The membrane acts as a quarter-wave backshort, once the diode chip is installed into the waveguide detector block and its back surface is metalized. The diode is fabricated between the arms of a bow-tie antenna coupled to a rectangular waveguide. EM modeling and preliminary performance tests suggest that the technology developed is suitable for the implementation of waveguide detectors operational within 100-180 GHz.
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