Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons

Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques. 2023. Vol. 17. No. 1. P. 48–53.

Andreev D. V., Bondarenko G., Andreev V. V.

The influence of high-field electron injection modes on the charge state and defectiveness of
metal–oxide–semiconductor (MOS) structures after irradiation is studied. It is shown that to remove the
radiation-induced positive charge accumulated in the SiO2 film of MOS structures, it is necessary to apply
the high-field Fowler–Nordheim tunneling injection of electrons in an electric field that do not cause hole
generation. It is established that removing the radiation-induced positive charge in the SiO2 film of a MOS
structure and the generation of new interface traps are mainly determined by the magnitude of the charge
injected into the dielectric. It is found that, upon the annihilation of holes trapped in SiO2 as a result of interaction
with injected electrons, a significant increase in the number of interface traps is observed, which significantly
exceeds the number of interface traps arising upon the annealing of a radiation-induced positive
charge at room temperature. A model is proposed that describes the annihilation of a radiation-induced positive
charge upon interaction with injected electrons.

Keywords: МОП-структуры, high-field injection, MOS Structures, Radiation-Induced Charge, радиационно-индуцированный заряд, сильно-полевая инжекция