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News
July 24, 2026
'Physics Is What the World Is Literally Built On'
Physicist Nina Dzhanayeva, recipient of a Vladimir Potanin Foundation scholarship, focuses her research on nanophotonics. In this interview for the HSE Young Scientists project, she discusses nanowells, scientific intuition, and how physics can help in making frangipane cream puffs.
July 20, 2026
Scientists Create Open Dataset for Studying Concentration
A team of Russian researchers, including scientists from HSE University–St Petersburg, has developed the first open multimodal dataset containing recordings of brain activity, heart function, and video observations to help researchers understand what happens in the human brain during deep concentration. In the future, the dataset could accelerate the development of neural interfaces, rehabilitation technologies, and AI systems. The article has been published in Scientific Data.
July 20, 2026
‘Science Is Universal-It Knows No Borders
Fuad Aleskerov, Tenured Professor and Director of the International Centre of Decision Choice and Analysis at HSE University, together with his colleagues, has developed methods of network analysis in bibliometrics that have made it possible to identify patterns in the appearance and citation of publications in academic journals, as well as their influence on each other. When one or a number of studies are frequently cited by a wide range of journals, this is an indicator that the research is of high quality. By contrast, extensive cross-citation within a limited group of journals increases the likelihood of identifying a network of predatory publications.

 

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Изменение зарядового состояния МОП-структур с радиационно-индуцированным зарядом при сильнополевой инжекции электронов

Поверхность. Рентгеновские, синхротронные и нейтронные исследования. 2023. № 1. С. 55–60.
Андреев Д. В., Bondarenko G., Андреев В. В.
Research target: Engineering and Technology Materials Technologies
Language: Russian
Full text
DOI
Keywords: high-field electron injectionМОП-структурасильно-полевая инжекция электроновMOS StructuresRadiation-Induced Chargeрадиационно-индуцированный заряд
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Influence of Pulsed Laser Radiation on the Morphology and Surface Properties of Tungsten Implanted with Helium Ions
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Моделирование влияния температуры на взаимодействие катода с тонкой диэлектрической пленкой и плазмы тлеющего газового разряда в смеси аргона и паров ртути
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Added: June 20, 2026
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Added: June 6, 2026
Facile and Green Approach to Synthesize Biomass-Derived Zero-/Two-Dimensional Carbon Dots/g-C3N4 Heterojunction for Efficient Photocatalytic and Photoelectrocatalytic Applications
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Optimal Design of Copper-Doped ZnO Heterostructures for Photocatalytic and Photoeletrochemical Performance: A Combined Experimental and DFT Study
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Based on the obtained experimental data, a model is developed for the processes of a variation in the charge state of MIS (metal–insulator–semiconductor) structures under the concurrent influence of high-field tunneling electron injection and radiation. The model takes into account the interaction between injected electrons and charges appearing in the dielectric film due to radiation ...
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Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors
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The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field e ect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation ...
Added: April 23, 2020
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Андреев Д. В., Bondarenko G., Андреев В. В. et al., Поверхность. Рентгеновские, синхротронные и нейтронные исследования 2020 № 3 С. 53–57
На основе полученных экспериментальных данных разработана модель процессов изменения зарядового состояния МДП-структур при одновременном воздействии сильнополевой туннельной инжекции электронов и радиационных излучений. Модель учитывает взаимодействие инжектированных электронов с зарядами, возникающими в диэлектрической пленке вследствие радиационной и сильнополевой ионизации. Показано, что при взаимодействии инжектируемых электронов с дырками, захваченными в пленке SiO2, часть дырок может аннигилировать, приводя к ...
Added: February 17, 2020
Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection
Andreev D. V., Bondarenko G., Stolyarov A. A., Inorganic Materials: Applied Research 2016 Vol. 7 No. 2 P. 187–191
The processes of changing the charge state of metal–oxide–semiconductor (MOS) structures that contain a multilayer gate dielectric on the basis of a thermal SiO2 film doped with phosphorus under the influence of highfield electron injection are investigated. It is determined that a negative charge accumulating in a thin phosphosilicate glass (PSG) film of MOS structures ...
Added: May 28, 2016
Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
Andreev V. V., Bondarenko G., Maslovsky V. M. et al., Acta Physica Polonica A 2015 Vol. 12 No. 5 P. 887–890
Methods of modication of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass ...
Added: December 31, 2015
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