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Subject
News
August 25, 2026
Scientists Develop Algorithm for More Reliable Processors in Data Centres
Researchers from HSE MIEM and Samara University have developed the LRF-3D algorithm to automatically bypass idle nodes in three-dimensional networks-on-chip. Thanks to its hierarchical architecture, the algorithm outperforms existing solutions in both speed and path accuracy, improving processor reliability for use in data centres, supercomputers, and AI computing. The source code and test results are publicly available.
August 24, 2026
Researchers Develop Method for Direct Generation of Regulatory DNA
Researchers at HSE University have developed a model for generating promoters and enhancers—DNA sequences that regulate gene activity. The model works directly with DNA nucleotides, without first transforming them into a continuous numerical representation. This solution could be useful for applications in synthetic biology and gene therapy. The study results were presented at the ICLR 2026 Workshop ‘Generative AI in Genomics (Gen^2): Barriers and Frontiers.’
August 21, 2026
Social Integration: At the Crossroads of Knowledge and Values
The International Laboratory for Social Integration Research (ILSIR) at HSE University studies the challenges faced by vulnerable groups and explores ways to help them participate fully in everyday life. To develop effective solutions, the laboratory’s researchers combine cutting-edge methods with practical fieldwork. In this interview with the HSE News Service, Laboratory Head Elena Iarskaia-Smirnova discusses the laboratory’s work.

 

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Изменение зарядового состояния МОП-структур с радиационно-индуцированным зарядом при сильнополевой инжекции электронов

Поверхность. Рентгеновские, синхротронные и нейтронные исследования. 2023. № 1. С. 55–60.
Андреев Д. В., Bondarenko G., Андреев В. В.
Research target: Engineering and Technology Materials Technologies
Language: Russian
Full text
DOI
Keywords: high-field electron injectionМОП-структурасильно-полевая инжекция электроновMOS StructuresRadiation-Induced Chargeрадиационно-индуцированный заряд
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Modeling of the Influence of Temperature on Interaction of a Cathode with a Thin Insulating Film and a Glow Gas Discharge Plasma in a Mixture of Argon and Mercury Vapor
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Моделирование влияния температуры на взаимодействие катода с тонкой диэлектрической пленкой и плазмы тлеющего газового разряда в смеси аргона и паров ртути
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Выполнено сравнительное исследование процессов сильнополевой зарядовой деградации подзатворного диэлектрика структур металл-диэлектрик-полупроводник (МДП) с алюминиевым и поликремниевым затвором. Зарядовые явления в МДП-структурах изучали методом сильнополевой инжекции электронов в диэлектрик в режиме возрастания плотности стрессового инжекционного тока с кратковременными переключениями в измерительный режим при постоянной низкой плотности инжекционного тока. Использование данного метода позволило получить новые данные о процессах зарядовой деградации подзатворного диэлектрика МДП-структур с ...
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The influence of high-field electron injection modes on the charge state and defectiveness of metal–oxide–semiconductor (MOS) structures after irradiation is studied. It is shown that to remove the radiation-induced positive charge accumulated in the SiO2 film of MOS structures, it is necessary to apply the high-field Fowler–Nordheim tunneling injection of electrons in an electric field that do not ...
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In the paper, we propose a model describing a change of charge state of MIS structures and sensors based on them being under influence of both a radiation ionization and high-field injection of electrons from the semiconductor. The model proposed takes into account the interaction of injected electrons with holes generated by the radiation and ...
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Based on the obtained experimental data, a model is developed for the processes of a variation in the charge state of MIS (metal–insulator–semiconductor) structures under the concurrent influence of high-field tunneling electron injection and radiation. The model takes into account the interaction between injected electrons and charges appearing in the dielectric film due to radiation ...
Added: May 26, 2020
Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors
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The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field e ect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation ...
Added: April 23, 2020
Зарядовые явления в диэлектрических пленках МДП-структур при одновременном воздействии радиационных излучений и сильнополевой инжекции электронов
Андреев Д. В., Bondarenko G., Андреев В. В. et al., Поверхность. Рентгеновские, синхротронные и нейтронные исследования 2020 № 3 С. 53–57
На основе полученных экспериментальных данных разработана модель процессов изменения зарядового состояния МДП-структур при одновременном воздействии сильнополевой туннельной инжекции электронов и радиационных излучений. Модель учитывает взаимодействие инжектированных электронов с зарядами, возникающими в диэлектрической пленке вследствие радиационной и сильнополевой ионизации. Показано, что при взаимодействии инжектируемых электронов с дырками, захваченными в пленке SiO2, часть дырок может аннигилировать, приводя к ...
Added: February 17, 2020
Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection
Andreev D. V., Bondarenko G., Stolyarov A. A., Inorganic Materials: Applied Research 2016 Vol. 7 No. 2 P. 187–191
The processes of changing the charge state of metal–oxide–semiconductor (MOS) structures that contain a multilayer gate dielectric on the basis of a thermal SiO2 film doped with phosphorus under the influence of highfield electron injection are investigated. It is determined that a negative charge accumulating in a thin phosphosilicate glass (PSG) film of MOS structures ...
Added: May 28, 2016
Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
Andreev V. V., Bondarenko G., Maslovsky V. M. et al., Acta Physica Polonica A 2015 Vol. 12 No. 5 P. 887–890
Methods of modication of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass ...
Added: December 31, 2015
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