Use of MIS Sensors of Radiation in High-Field Electron Injection Modes

Journal of Contemporary Physics. 2020. Vol. 55. No. 2. P. 144–150.

Andreev D. V., Bondarenko G.G., Andreev V. V., Stolyarov A. A.

In the paper, we propose a model describing a change of charge state of MIS structures and sensors based on them being under influence of both a radiation ionization and high-field injection of electrons from the semiconductor. The model proposed takes into account the interaction of injected electrons with holes generated by the radiation and high-field ionization and captured by traps in the SiO2 film at the interface with the semiconductor. Besides, the model takes into consideration the generation of the surface states at annihilation of a fraction of holes during their interaction with injected electrons. We demonstrate that MIS sensor, being under high-field injection of electrons into the dielectric film by constant current, can be utilized to control intensity of radiation by determining the current of radiation ionization using time dependence of voltage across the sensor using the model proposed. We have ascertained that in case the MIS sensor being under high-field injection of electrons, a significant raising of the dose sensitivity of MIS sensors of the absorbed dose has been possible. However, at that working life and dose range of MIS sensors could be significantly smaller.

Keywords: radiation, радиация, high-field electron injection, MIS Sensors, МДП сенсоры, сильно-полевая инжекция электронов