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September 25, 2026
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Half-disk lasers with active region based on InGaAs/GaAs quantum well-dots

Laser Physics. 2022. Vol. 32. No. 12. Article 125802.
Zubov F., Eduard I. Moiseev, Maximov M., Vorobyev A., Mozharov A., Shernyakov Y., Kalyuzhnyy N., Mintairov S., Kulagina M., Dubrovskii V., Natalia V. Kryzhanovskaya, Alexey E. Zhukov

Half-disk lasers fabricated by cleaving initial full-disk lasers have an advantage of directional light outcoupling as well as increased output power and efficiency as compared to full-disk lasers of the same diameter. The continuous wave output power of a 200 µm diameter half-disk laser exceeds 70 mW. Quasi single-mode lasing with a high side-mode suppression ratio more than 20 dB is demonstrated for half-disk lasers of various diameters. A maximum 3 dB small signal modulation frequency of 4.9 GHz was measured for a 100 µm in diameter half-disk laser.

Research target: Physics Nanotechnologies
Language: English
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Keywords: semiconductor laserмикролазеры полупроводниковые лазерыQuantum well-dotsквантовые яма-точкиmicrolasers
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)
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