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Acceptor-Assisted Intraband Photoconductivity in GaAs/AlGaAs Quantum Wells
Ch. 7. P. 79–90.
The present work is devoted to the experimental investigation of the far-, mid- and near-infrared photoconductivity related to the optical hole transitions involving acceptor states in GaAs/AlGaAs quantum wells.Photoconductivity spectra are studied at low lattice temperatures.It is shown that the main contribution to the far- and mid-infrared photoconductivity is associated with the optical hole transitions from the ground acceptor state to the delocalized states of the valence subbands, delocalized states above the quantum well and to the excited states of the acceptors.The relaxation times of impurity-assisted photocurrent in quantum wells were also studied.The ionization energies of the acceptor impurity obtained by various experimental methods are in a good agreement with theoretical calculations.
Ивашенцева И. В., Федотов П. В., Каурова Н. С. et al., Журнал технической физики 2024 Т. 94 № 8 С. 1391–1397
A technology for sensitizing a structure consisting of a graphene nanoribbon (GNR) on a Si/GNR silicon substrate in the near-IR range of the electromagnetic spectrum is presented. This technology is based on doping the GNR with He4. A more than 25-fold increase in the response at a wavelength of 1.35 μm in the Si/GNR/He4 structure, ...
Added: December 23, 2025
Adamov R. B., Melentev G. A., Podoskin A. A. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2024 Vol. 17 No. 1.1 P. 68–76
Comprehensive studies of the luminescence of p–i–n structures with 10 compensated GaAs/AlGaAs quantum wells have been performed. The studies were carried out in the terahertz (THz) and near-infrared (NIR) spectral ranges with both optical and electrical pumping of nonequilibrium charge carriers. The THz photoluminescence spectra revealed an emission line caused by electron transitions from the first size-quantization ...
Added: August 27, 2024
Адамов Р. Б., Мелентьев Г. А., Подоскин А. А. et al., Физика и техника полупроводников 2023 Т. 57 № 8 С. 663–673
Исследованы фото- и электролюминесценция в p-i-n-структурах с компенсированными квантовыми ямами GaAs/AlGaAs с различными профилями легирования: с пространственным разделением доноров и акцепторов (доноры локализованы в квантовых ямах, акцепторы - в барьерах) и без него (и доноры, и акцепторы локализованы в квантовых ямах). Изучались спектральные характеристики люминесценции в ближнем ИК диапазоне при гелиевых температурах. Выявлены линии излучательной ...
Added: February 5, 2024
Adamov R. B., Melentev G. A., Sedova I. V. et al., Journal of Luminescence 2024 Vol. 266 Article 120302
Terahertz (THz) luminescence in doped nanostructures with GaAs/AlGaAs quantum wells is studied under conditions of interband optical pumping. The study is carried out on compensated quantum wells with different doping profiles. In one structure, compensation is carried out directly in each quantum well by introducing donors and acceptors with the same concentration. In the other, ...
Added: November 12, 2023
Адамов Р. Б., Петрук А. Д., Мелентьев Г. А. et al., Научно-технические ведомости Санкт-Петербургского государственного политехнического университета. Физико-математические науки 2022 Т. 15 № 4 С. 32–43
In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed. The PL spectra recorded at 5 K for different intensities of interband optical pumping were analyzed and main channels of radiative recombination were determined. The dependences of the main PL line intensities ...
Added: July 3, 2023
Nikolaev I., Kazakov A., Drozdov K. et al., Journal of Applied Physics 2022 Vol. 132 No. 23 Article 234301
We report a detailed study of the bipolar persistent photoconductivity in an HgTe/CdHgTe double quantum well (DQW), which can be a perspective for studying topological states in these structures. Photoconductivity spectra measurements in the range of 1.1–3.1 eV as well as transport measurements under different illumination conditions were performed at T = 4.2 K. Based on the results, the processes ...
Added: June 7, 2023
Новиков И. И., Няпшаев И. А., Гладышев А. Г. et al., Физика и техника полупроводников 2022 Т. 56 № 9 С. 933–939
Исследовано влияние состава волновода InGaAlAs на фотолюминесценцию и электролюминесценцию гетероструктур спектрального диапазона 1550 нм на основе тонких напряженных квантовых ям In0.74Ga0.26As. Предложен подход, позволяющий на основе анализа электролюминесценции провести сравнительный анализ параметров усиления изготовленных лазерных гетероструктур. Показано, что уменьшение доли алюминия в составе волноводных слоев гетероструктуры, согласованных по постоянной решетки с фосфидом индия, приводит к ...
Added: January 4, 2023
Firsov D., Makhov I., Panevin V. et al., , in: Proceedings of the 9th International Symposium OPTICS-2022.: Springer, 2022. Ch. 2 P. 21–38.
A review of the results of studies of terahertz radiation associated with impurity electron transitions in n-doped GaAs/AlGaAs quantum wells under conditions of interband optical excitation of nonequilibrium charge carriers is presented.The principles of radiation generation and methods of controlling its intensity are described: a decrease in the lifetime of electrons at impurity levels due ...
Added: November 7, 2022
Vinnichenko M. Y., Makhov I., Ustimenko R. V. et al., , in: 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).: IEEE, 2022. P. 1–2.
Added: October 25, 2022
IEEE, 2022.
The International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMWTHz), begun in 1974, is the oldest and largest continuous forum specifically devoted to the field of ultra-high frequency electronics and applications. In 2004 the original conference series – International Conference on Infrared and Millimeter Waves (IRMMW) joined up with the International Conference on THz Electronics ...
Added: October 25, 2022
Makhov I., Budkin G. V., Graf S. V. et al., Micro and Nanostructures 2022 Vol. 167 Article 207288
The effect of current drag of photons is experimentally investigated in the mid-infrared spectral range corresponded to the intersubband optical electron transitions in GaAs/AlGaAs quantum wells at room temperature for the first time. The optical electron transitions between the first and second electron subbands in quantum wells are revealed in light absorption spectra in the mid-infrared range. The dependences of the ...
Added: July 5, 2022
IEEE, 2021.
The International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), begun in 1974, is the oldest and largest continuous forum specifically devoted to the field of ultra high frequency electronics and applications. In 2004 the original conference series – International Conference on Infrared and Millimeter Waves (IRMMW) joined up with the International Conference on THz ...
Added: July 5, 2022
Vinnichenko M. Y., Makhov I., Kharin N. Y. et al., Semiconductors 2022 Vol. 55 No. 9 P. 710–716
The low-temperature impurity-assisted photoconductivity and absorption spectra of a nanostructure
with acceptor-doped multiple GaAs/AlGaAs quantum wells are investigated. The experimental absorption
and photoconductivity spectra agree well with each other. Using the calculated energy spectrum of the
hole and acceptor states in the quantum wells, the contributions of the transitions of holes from the ground
acceptor state to the delocalized ...
Added: March 14, 2022
Nadtochiy A., Gordeev N., Kharchenko A. et al., Journal of Lightwave Technology 2021 Vol. 39 No. 23 P. 7479–7485
Modal absorptions in laser-like heterostructures containing
InAs self-assembled quantum dots (QDs) and InGaAs
quantum well-dots (QWDs) have been studied. The evaluation
of photoresponse as a function of waveguide length has allowed
us to determine per-layer modal absorptions of 69 and 13 cm-1
for the ground state optical transitions of QWDs and QDs, respectively.
The values of the modal absorption can be ...
Added: November 28, 2021
Budkin G. V., Makhov I. S., Firsov D. A., Journal of Physics: Condensed Matter 2021 Vol. 33 No. 16 Article 165301
The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in ...
Added: October 8, 2021
Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 11 С. 20–23
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated
that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the
temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic
temperature of threshold current and differential efficiency at temperatures from ...
Added: March 16, 2021
Moiseev E., Максимов М. В., Kryzhanovskaya N. et al., Физика и техника полупроводников 2020 Т. 54 № 2 С. 212–216
The results are presented on a comparative analysis of spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx µm with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold ...
Added: September 30, 2020