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Acceptor-Assisted Intraband Photoconductivity in GaAs/AlGaAs Quantum Wells

Ch. 7. P. 79–90.
Vinnichenko M., Makhov I., Panevin V., Ustimenko R., Melentev G., Sorokin S., Sedova I.

The present work is devoted to the experimental investigation of the far-, mid- and near-infrared photoconductivity related to the optical hole transitions involving acceptor states in GaAs/AlGaAs quantum wells.Photoconductivity spectra are studied at low lattice temperatures.It is shown that the main contribution to the far- and mid-infrared photoconductivity is associated with the optical hole transitions from the ground acceptor state to the delocalized states of the valence subbands, delocalized states above the quantum well and to the excited states of the acceptors.The relaxation times of impurity-assisted photocurrent in quantum wells were also studied.The ionization energies of the acceptor impurity obtained by various experimental methods are in a good agreement with theoretical calculations. 

Language: English
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Keywords: квантовые ямыинфракрасный диапазонinfrared rangequantum wellacceptorакцепторы
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)

In book

Proceedings of the 9th International Symposium OPTICS-2022
Springer, 2022.
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