• A
  • A
  • A
  • АБВ
  • АБВ
  • АБВ
  • A
  • A
  • A
  • A
  • A
Обычная версия сайта
  • RU
  • EN
  • HSE University
  • Publications
  • Book chapter
  • Infrared photoluminescence and absorption of Ge/Si quantum dots with different doping levels
  • RU
  • EN
Расширенный поиск
Высшая школа экономики
Национальный исследовательский университет
Priority areas
  • business informatics
  • economics
  • engineering science
  • humanitarian
  • IT and mathematics
  • law
  • management
  • mathematics
  • sociology
  • state and public administration
by year
  • 2027
  • 2026
  • 2025
  • 2024
  • 2023
  • 2022
  • 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • 2000
  • 1999
  • 1998
  • 1997
  • 1996
  • 1995
  • 1994
  • 1993
  • 1992
  • 1991
  • 1990
  • 1989
  • 1988
  • 1987
  • 1986
  • 1985
  • 1984
  • 1983
  • 1982
  • 1981
  • 1980
  • 1979
  • 1978
  • 1977
  • 1976
  • 1975
  • 1974
  • 1973
  • 1972
  • 1971
  • 1970
  • 1969
  • 1968
  • 1967
  • 1966
  • 1965
  • 1964
  • 1963
  • 1958
  • More
Subject
News
August 13, 2026
‘Working with AI Solves a Wide Range of Engineering Problems
Artificial intelligence is a working tool based on a balanced combination of algorithms and engineering. Experts and doctoral students from the HSE Moscow Institute of Electronics and Mathematics explain how AI technologies can improve an application, device, or system, and what engineering tasks are solved in the process.
August 12, 2026
‘I Would Like My Research to Help Make the World a Calmer and Better Place
Whatever task Saraa Ali, Junior Research Fellow at the Laboratory of Methods for Big Data Analysis (LAMBDA) of the AI and Digital Science Institute (HSE Faculty of Computer Science), is working on, she thinks about how it can benefit people. She told the Young Scientists of HSE University project about her large family, diagnosing three-phase motors, and her dream of building a children’s home in her native country.
August 11, 2026
‘The Peak of Stupidity and ‘The Valley of Despair: HSE Economists Propose an Explanation for the Dunning–Kruger Effect
The Dunning–Kruger effect, which describes a sharp surge in self-confidence among beginners followed by an equally rapid decline as they gain experience, can be explained by the nature of the learning process and the acquisition of new knowledge. This conclusion was reached by Andrey Vorchik of the HSE Faculty of Economic Sciences together with independent researcher Murat Mamyshev. They developed a mathematical model of learning and demonstrated how subjective confidence is formed and changes as knowledge accumulates, as well as how teachers can reduce the ‘valley of despair’ experienced by learners.

 

Have you spotted a typo?
Highlight it, click Ctrl+Enter and send us a message. Thank you for your help!

Publications
  • Books
  • Articles
  • Chapters of books
  • Working papers
  • Report a publication
  • Research at HSE

?

Infrared photoluminescence and absorption of Ge/Si quantum dots with different doping levels

P. 1–2.
Vinnichenko M. Y., Makhov I., Ustimenko R. V., Sarkisyan H. A., Firsov D. A.
Language: English
Full text
DOI
Text on another site
Keywords: поглощениеquantum dotквантовые точкиинфракрасный диапазонabsorptionterahertz infraredтерагерцовый диапазон
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)

In book

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
IEEE, 2022.
Similar publications
Источник одиночных фотонов с использованием коллоидных квантовых точек CdSe/CdS/ZnS на волноводах из нитрида кремния
Касимов Р. Х., Аржанов А. И., Седых К. О. et al., Оптический журнал 2026 Т. 93 № 1 С. 80–86
Предмет исследования. Использование метода капельного нанесения для изготовления источника одиночных фотонов. Цель работы. Разработка технологического процесса изготовления источника одиночных фотонов на коллоидных квантовых точках для использования их в фотон- ных интегральных схемах. Метод. На первом этапе в программе ANSYS Lumerical рассчитыва- ются период и фактор заполнения фокусирующих элементов связи на длинах волн 545 и 600 ...
Added: July 31, 2026
Room-temperature, continuous wave lasing in planar microcavities with quantum dots
Babichev A., Bobrov M., Vasil'ev A. et al., Applied Physics Letters 2026 Vol. 128 No. 24 Article 241102
High-quality planar cavities with low-absorption mirrors based on Al0.2Ga0.8As/Al0.9Ga0.1As layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and the quality-factor at the threshold are 4.2 kW/cm2 and 6800. Increasing the pump level above two thresholds results in an enlargement in the quality-factor to at least 19 ...
Added: July 8, 2026
Quantum-dot surface-emitting lasers: micropillar cavities grown by molecular-beam epitaxy
Babichev A., Makhov I., Kryzhanovskaya N. et al., IEEE Journal on Selected Topics in Quantum Electronics 2026 Vol. 32 No. 6 Article 1700208
Micropillar cavity lasers demonstrate operation up to 255 K. At this temperature, the lasing threshold and Q-factor, extracted at lasing threshold for a 4 μm diameter pillar are about 2 mW and 16800. For pillar lasers, the concept of which is based on an optical aperture, continuous-wave lasing is realized at room temperature (300 K). ...
Added: March 23, 2026
Поверхностная генерация в микролазерах на основе вертикального микрорезонатора
Бабичев А. В., Makhov I., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2025 № 21 С. 58–62
Продемонстрирована генерация в микролазерах на основе вертикального микрорезонатора при температуре 244 K. Пороговая поглощенная оптическая мощность, длина волны генерации и добротность микролазера с диаметром 4 µm составили ∼ 2.8 mW, 989 nm и 12 000 соответственно. Минимальная пороговая поглощенная оптическая мощность (250 µW) соответствует температуре 168 K. ...
Added: March 13, 2026
Advanced micropillar cavities: Room-temperature operation of microlasers
Babichev A., Blokhin A., Zadiranov Y. et al., Applied Physics Letters 2026 Vol. 128 No. 5 Article 051105
High-quality micropillar cavities were grown using molecular-beam epitaxy. Stable continuous-wave lasing at room temperature was demonstrated for microlasers with semiconductor and hybrid output mirrors. At 300 K, single-mode lasing was demonstrated for micropillars with a diameter of 5 um at a wavelength of 960 nm, with a minimum lasing threshold of 1.2 mW and the ...
Added: March 13, 2026
Детектор ИК диапазона на основе графеновых нанополос
Ивашенцева И. В., Федотов П. В., Каурова Н. С. et al., Журнал технической физики 2024 Т. 94 № 8 С. 1391–1397
A technology for sensitizing a structure consisting of a graphene nanoribbon (GNR) on a Si/GNR silicon substrate in the near-IR range of the electromagnetic spectrum is presented. This technology is based on doping the GNR with He4. A more than 25-fold increase in the response at a wavelength of 1.35 μm in the Si/GNR/He4 structure, ...
Added: December 23, 2025
Development of Mixers for the High Resolution Spectrometer of the Millimetron Space Observatory
Третьяков И. В., Худченко А. В., Рудаков К. И. et al., IEEE Transactions on Terahertz Science and Technology 2024 Vol. 15 No. 2 P. 191–199
The study of the origin and transport of water in the universe is an important part of the scientific program of the Millimetron space observatory. This will be made possible by observations conducted in single-dish mode using an onboard instrument—the high-resolution spectrometer (HRS). This instrument incorporates heterodyne array receivers operating within the range $0.5 -2.7$ ...
Added: December 23, 2025
Высокочастотная модуляция микрокольцевого лазера с квантовыми точками при повышенной температуре
Zhukov A., Moiseev E., Makhov I. et al., Письма в Журнал технической физики 2025 Т. 51 № 20 С. 32–35
The dynamic characteristics of an InGaAs/GaAs quantum dot microring laser were investigated using small-signal high-frequency current modulation at 55 °C. The maximum modulation bandwidth was 3.7 GHz, and the energy consumption during optical transmission was estimated to be 4.2–6.4 pJ/bit. The temperature dependencies of the parameters affecting the speed of operation (K-factor, threshold current, current ...
Added: October 29, 2025
Phosphorene junctions as a platform for spin-selective quantum dots in next-generation devices
Пеетерс Ф. М., Mahdavifar M., Khoeini F., Journal of Applied Physics 2024 Vol. 136 Article 184301
The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions is investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon containing a monovacancy is found to exhibit a topological quasi-flatband that emerges within the bandgap. The electronic properties of QDs, including spatial confinement and energy level distribution, can be ...
Added: September 15, 2025
Analysis of factors determining the azimuthal and radial order of lasing mode in III–V quantum dot disk microlasers
Konstantin A. Ivanov, Alexey E. Zhukov, Eduard I. Moiseev et al., Journal of Applied Physics 2025 Vol. 138 No. 10 Article 103104
Microlasers supporting whispering gallery modes attract great interest because of their potential use in photonic integrated circuits: they have size just an order of magnitude larger than their emission wavelength and exhibit good thermal and dynamic properties. It is usually assumed that in disk microlasers a whispering gallery mode of the highest azimuthal order and ...
Added: September 11, 2025
Монолитная интеграция микродисковых лазеров на основе InGaAs/GaAs квантовых точек с просветляемыми оптическими волноводами
Fominykh N., Fedosov I. S., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2025 Т. 51 № 19 С. 11–14
The directed emission output of microdisk lasers through a coupled optical waveguide fabricated from the same heterostructure has been investigated. Disks with diameters of 30 and 40 µm containing an active region based on InGaAs/GaAs quantum dots were studied. To reduce absorption losses in the waveguide, a forward bias was applied to it. At a ...
Added: August 27, 2025
Бимодальная генерация на модах шепчущей галереи в лазерах на основе вертикального микрорезонатора
Бабичев А. В., Makhov I., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2025 Т. 51 № 5 С. 41–44
Представлены результаты исследования расщепления мод шепчущей галереи в лазерах спектрального диапазона 930-950 nm на основе вертикального микрорезонатора. Использование распределенных брэгговских отражателей на основе чередующихся слоев Al0.2Ga0.8As/Al0.9Ga0.1As, не поглощающих на длине волны накачного лазера, позволило снизить величину пороговой мощности оптической накачки до 180 μW (для 3 μm-микролазера). Добротность микрорезонатора на пороге генерации для мод шепчущей галереи ...
Added: April 30, 2025
Fundamental difference in the mechanisms of transformation of InAs nanostructures due to indium segregation on flat and patterned GaAs surfaces
Solodovnik M., Balakirev S., Ivan S. Makhov et al., Applied Surface Science 2025 Vol. 700 Article 163211
Despite the rapid growth in the number of studies devoted to quantum dot (QD) formation on patterned substrates, segregation effects that have a significant impact on the properties of QD-based heterostructures remain largely unexplored. In this paper, we focus on the influence of segregation under different capping regimes on the optical properties of various InAs/GaAs nanostructures: QDs and ...
Added: April 17, 2025
Band-Gap Engineering of High-Entropy Fluorite Metal Oxide Nanoparticles Facilitated by Pr3+ Incorporation by Gel Combustion Synthesis
Anandkumar M., Kesavan K. P., Sudarsan S. et al., Gels 2025 Vol. 11 No. 2 Article 117
Tailoring the bandgap of a material is necessary for improving its optical properties. Here, the optical bandgap of high-entropy oxide Ce0.2Gd0.2Sm0.2Y0.2Zr0.2O2-δ (HEO) nanoparticles was modified using Pr3+. Various concentrations of Pr3+ (x = 0, 0.01, 0.02, 0.05, 0.075, 0.1, 0.15) were incorporated into the host high-entropy oxide using a gel combustion synthesis. After the gel ...
Added: February 18, 2025
Reflectarray-Assisted Spacial Binning in HEB-Based Terahertz Dispersive Spectrometer
Shurakov A., Lvov A., Belikov I. et al., , in: 2024 IEEE 9th All-Russian Microwave Conference (RMC).: IEEE, 2024. P. 196–199.
Terahertz frequency range attracts the attention of the scientific community in different fields, including data transfer, imaging, and spectral analysis. In the context of astronomical instrumentation, the utilization of the 7–14 THz spectral band opens up opportunities for advanced studies of exoplanet formation and the energy balance in the interstellar medium from the Earth surface. ...
Added: January 24, 2025
Low-threshold surface-emitting whispering-gallery mode microlasers
Babichev A., Makhov I., Kryzhanovskaya N. et al., IEEE Journal on Selected Topics in Quantum Electronics 2025 Vol. 31 No. 2 Article 1502808
We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of lowabsorbing Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comblike structure) is observed in the wavelength range of 930–970 nm ...
Added: January 9, 2025
Lasing of Quantum-Dot Micropillar Lasers Under Elevated Temperatures
Babichev A., Makhov I., Kryzhanovskaya N. et al., IEEE Journal on Selected Topics in Quantum Electronics 2025 Vol. 31 No. 5 Article 1900208
A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of ...
Added: January 9, 2025
Ultra-short stripe microlasers fabricated with a focused ion beam etching technique
Makhov I., Komarov S., Fominykh N. et al., Optics Letters 2025 Vol. 50 No. 2 P. 387–390
Fabry–Perot (FP) lasers with a cavity length shorten down to 50 μm were investigated. One or two laser mirrors were formed by focused ion beam etching. InGaAs quantum dots of high density were used as the laser active region. The lasers operate in a pulsed regime up to at least 105°S. A comparison with lasers formed by ...
Added: January 9, 2025
Far-field patterns and lasing threshold of limaçon − and quadrupole-shaped microlasers with InGaAs quantum well-dots
Moiseev E., Ivanov K., Khabibullin R. et al., Optics and Laser Technology 2025 Vol. 183 Article 112299
We demonstrate that microlasers with an anisotropic cavity (limaçon- or quadrupole-shaped) containing quantum well-dots in the active region are able to operate under continuous wave current injection at 90 °C. Deviation of the cavity shape from circular leads to the directionality of the emission in the lateral direction, while the quality factor of the structures and ...
Added: December 23, 2024
Высокодобротные состояния в спектрах излучения линейных периодических цепочек Si-нанодисков со встроенными GeSi-квантовыми точками
Зиновьев В. А., Смагина Ж. В., Зиновьева А. Ф. et al., Физика и техника полупроводников 2024 Т. 58 № 5 С. 238–241
In this work the luminescent properties of structures with linear periodic chains of Si nanodisks with embedded GeSi quantum dots were studied. It was found that the formation of linear chains of resonators leads to a change in the intensity and directivity of quantum dots emission. Narrow high-Q peaks that are associated with collective modes ...
Added: November 24, 2024
Зависимость длины волны генерации от оптических потерь в лазере на квантовых точках
Kryzhanovskaya N., Makhov I., Nadtochiy A. et al., Письма в Журнал технической физики 2024 Т. 50 № 21 С. 57–60
The dependence of the laser generation line position on optical losses in strip lasers containing different number of layers of dense arrays of InGaAs/GaAs quantum dots (quantum wells) has been studied. An analytical expression establishing an explicit connection between the position of the maximum of the gain spectrum and the magnitude of the gain at ...
Added: October 14, 2024
  • About
  • About
  • Key Figures & Facts
  • Sustainability at HSE University
  • Faculties & Departments
  • International Partnerships
  • Faculty & Staff
  • HSE Buildings
  • HSE University for Persons with Disabilities
  • Public Enquiries
  • Studies
  • Admissions
  • Programme Catalogue
  • Undergraduate
  • Graduate
  • Exchange Programmes
  • Summer University
  • Summer Schools
  • Semester in Moscow
  • Business Internship
  • Research
  • International Laboratories
  • Research Centres
  • Research Projects
  • Monitoring Studies
  • Conferences & Seminars
  • Academic Jobs
  • Yasin (April) International Academic Conference on Economic and Social Development
  • Media & Resources
  • Publications by staff
  • HSE Journals
  • Publishing House
  • iq.hse.ru: commentary by HSE experts
  • Library
  • Economic & Social Data Archive
  • Video
  • HSE Repository of Socio-Economic Information
  • HSE1993–2026
  • Contacts
  • Copyright
  • Privacy Policy
  • Site Map
Edit