Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board

Optics Letters. 2021. Vol. 46. No. 16. P. 3853–3856.

Зубов Ф. И., Максимов М. В., Moiseev E., Berdnikov Y., Kryzhanovskaya N., Zhukov A.

We study the impact of improved heat removal on the performance
of InGaAs/GaAs microdisk lasers epi-side down
bonded onto a silicon substrate. Unlike the initial characteristics
of microlasers on a GaAs substrate, the former’s
bonding results in a decrease in thermal resistance by a factor
of 2.3 (1.8) in microdisks with a diameter of 19 (31) m,
attributed to a thinner layered structure between the active
region and the substrate and the better thermal conductivity
of Si than GaAs. Bonded microdisk lasers show a
2.4–3.4-fold higher maximum output power, up to
21.7 mW, and an approximately 20% reduction in the
threshold current. A record high 3 dB small-signal modulation
bandwidth of 7.9 GHz for InGaAs/GaAs microdisk
lasers is achieved.

Keywords: микродисковый лазер, microdisk laser

Publication based on the results of: Investigation of the temperature and time characteristics of heterostructures with quantum dots and micro-emitters based on them (2021)