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Phonon lasing with an atomic thin membrane resonator at room temperature
Graphene has been considered as one of the best materials to implement mechanical
resonators due to their excellent properties such as low mass, high quality factors and tunable
resonant frequencies. Here we report the observation of phonon lasing induced by the photonthermal
pressure in a few-layer graphene resonator at room temperature, where the graphene
resonator and the silicon substrate form an optical cavity. A marked threshold in the oscillation
amplitude and a narrowing linewidth of the vibration mode are observed, which confirms a
phonon lasing process in the graphene resonator. Our findings will stimulate the studies on
phononic phenomena, help to establish new functional devices based on graphene mechanical
resonators, and might find potential applications in classical and quantum sensing fields, as well
as in information processing.