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Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon
Ch. 117750P. P. 75–79.
A method of hybrid integration of quantum dot microdisk lasers with silicon wafer is proposed and realized. In addition
to the possibility of combining microlasers with various silicon-based electronic and photonic devices, this makes it
possible to significantly improve heat removal from the active region of the microlaser. The thermal resistance
normalized to the mesa area reaches the level of about 0.002 (K/W)*cm2, which is significantly lower than the
corresponding values of QD microlasers on GaAs substrate and monolithically grown on Si. As a result, the threshold
current as well as current-induced shift of emission wavelength are reduced in continuous-wave regime.
In book
Vol. 11775. , Washington: SPIE, 2021.
Ivanov K., Fedosov I. S., Войтович В. И. et al., Письма в Журнал технической физики 2026 Т. 52 № 12 С. 53–58
The paper presents the model of a microdisk laser – photonic crystal defect waveguide coupling system. Different finite dimensions of photonic crystals are taken into account. It is shown that coupling to a photonic crystal waveguide allows to increase the output power while maintain quality factor, which is not what a traditional coupling to a ...
Added: June 4, 2026
Fedosov I. S., Fominykh N., Kryzhanovskaya N. et al., Физика и техника полупроводников 2025 Т. 59 № 7 С. 388–391
The power and spectral characteristics of the radiation of a semiconductor microdisk laser with a diameter of 40 µm, monolithically integrated with an optical waveguide, have been studied. To reduce absorption in the waveguide, current pumping was used. In the light–current dependence, features associated with the onset of generation at a longer-wavelength resonance are observed. ...
Added: February 27, 2026
Fedosov I. S., Fominykh N., Kryzhanovskaya N. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2025 Vol. 18 No. 3.2 P. 200–204
We investigate the mode composition of a microdisk laser coupled with an optical waveguide. The output spectra of emission and light-current characteristic of the microlaser obtained from the output edge of the waveguide are studied. The microlaser demonstrates single-mode emission in consecutive ranges of injection currents, that are alternated with pronounced mode hoping. The intensity ...
Added: January 12, 2026
Fedosov I. S., Fominykh N., Kryzhanovskaya N. et al., , in: BOOK of ABSTRACTS 12-th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures.: -, 2025. Ch. 45 P. 112–113.
We investigate the spectral composition of radiation of microdisk lasers coupled with optical waveguides. We study output spectrum and light-current characteristic of the microlaser obtained from the output edge of the optical waveguide. The microlaser demonstrated single-mode emission in extended ranges of the injection current, up to 75 mA, that are alternated with pronounced mode ...
Added: October 29, 2025
Kryzhanovskaya N., Moiseev E., Nadtochiy A. et al., , in: 2024 Asia Communications and Photonics Conference (ACP) and International Conference on Information Photonics and Optical Communications (IPOC).: IEEE, 2024. P. 1–4.
Semiconductor microdisk lasers developed using III-V epitaxial materials are widely studied during the last decade due to the bright prospectives coming from high quality circular cavity. The threshold and spectral characteristics of microlasers have been studied in sufficient detail, but the issue of the output power of such lasers has not been addressed, just as ...
Added: January 13, 2025
Kryzhanovskaya N., Makhov I., Nadtochiy A. et al., Письма в Журнал технической физики 2024 Т. 50 № 21 С. 57–60
The dependence of the laser generation line position on optical losses in strip lasers containing different number of layers of dense arrays of InGaAs/GaAs quantum dots (quantum wells) has been studied. An analytical expression establishing an explicit connection between the position of the maximum of the gain spectrum and the magnitude of the gain at ...
Added: October 14, 2024
A. A. Karaborchev, I. S. Makhov, Shandyba N. A. et al., Journal of Physics D: Applied Physics 2024 Vol. 57 No. 28 Article 285104
In this papaer, the emission characteristics of InAs/InGaAs quantum dot (QD) microdisk lasers, of different cavity diameters, with a top split electrical contact formed using the focused ion beam technique are investigated. The dependences of the threshold currents of two-state lasing (i.e. currents corresponding to the start of the ground- and excited-state lasing) for microdisks ...
Added: August 26, 2024
Zhukov A., Nadtochiy A., Alexey Karaborchev et al., Optics Letters 2024 Vol. 49 No. 2 P. 330–333
A quantum-dot microdisk was optically pumped by continuous-wave excitation with a level sufficient for the ground-state lasing. The microdisk was additionally illuminated with sub-ps pulses of various powers. It was found that there is a critical level of pulse power that determines the subsequent transient process of the microlaser. Depending on the level of the ...
Added: February 5, 2024
Han L., Wang Z., Gordeev N. et al., Micromachines 2023 Vol. 14 No. 6 Article 1271
Semiconductor lasers have developed rapidly with the steady growth of the global laser
market. The use of semiconductor laser diodes is currently considered to be the most advanced
option for achieving the optimal combination of efficiency, energy consumption, and cost parameters
of high-power solid-state and fiber lasers. In this work, an approach for optical mode engineering
in planar waveguides ...
Added: June 27, 2023
Makhov I., Ivanov K., Moiseev E. et al., Optics Letters 2023 Vol. 48 No. 13 P. 3515–3518
The peculiarities of two-state lasing in a racetrack microlaser
with an InAs/GaAs quantum dot active region are
investigated by measuring the electroluminescence spectra
at various injection currents and temperatures. Unlike
edge-emitting and microdisk lasers, where two-state lasing
involves the ground and first excited-state optical transitions
of quantum dots, in racetrack microlasers, we observe lasing
through the ground and second excited states. As ...
Added: June 27, 2023
Fedor Zubov, Moiseev E., Mikhail Maximov et al., Photonics 2023 Vol. 10 No. 3 Article 290
We report on half-ring lasers that are 100–200 um in diameter and are fabricated by cleaving
the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the
same wafer are compared. The active area of the microlasers is based on the quantum heterostructures
of mixed (0D/2D) dimensionality, referred to as quantum well-dots with ...
Added: June 27, 2023
Максимов М. В., Шерняков Ю. М., Гордеев Н. Ю. et al., Письма в Журнал технической физики 2023 Т. 49 № 5 С. 18–21
We propose an approach for encoding and transmitting information based on the use of a quantum dot laser, which, depending on the injection current, emits either one of two or simultaneously two spectral components, with different wavelengths. When the laser is modulated by current, each lasing line is detected by an independent photodiode, and thus ...
Added: June 27, 2023
Makhov I., Ivanov K., Moiseev E. et al., Nanomaterials 2023 Vol. 13 No. 5 Article 877
One-state and two-state lasing is investigated experimentally and through numerical simulation
as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs
quantum dots. Near room temperature, the temperature-induced increment of the ground-state
threshold current density is relatively weak and can be described by a characteristic temperature
of about 150 K. At elevated temperatures, a faster (super-exponential) increase in ...
Added: April 25, 2023
Makhov I., Ivanov K., Moiseev E. et al., Photonics 2023 Vol. 10 No. 3 Article 235
The two-state lasing phenomenon, which manifests itself in simultaneous laser emission
through several optical transitions of quantum dots, is studied in microdisk diode lasers with
different cavity diameters. The active region represents a multiply stacked array of self-organized
InAs/InGaAs/GaAs quantum dots emitting in the wavelength range of 1.1–1.3 um. Two-state
lasing, which involves the ground-state and the first excited-state ...
Added: April 25, 2023
Zhukov A., Moiseev E., Nadtochiy A. et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active
region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: ...
Added: January 26, 2023
Zubov F., Eduard I. Moiseev, Maximov M. et al., Laser Physics 2022 Vol. 32 No. 12 Article 125802
Half-disk lasers fabricated by cleaving initial full-disk lasers have an advantage of directional light outcoupling as well as increased output power and efficiency as compared to full-disk lasers of the same diameter. The continuous wave output power of a 200 µm diameter half-disk laser exceeds 70 mW. Quasi single-mode lasing with a high side-mode suppression ratio ...
Added: December 13, 2022