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Молекулярно-пучковая эпитаксия двухмерных слоев GaSe на подложках GaAs(001) и GaAs(112): структурные и оптические свойства
Физика и техника полупроводников. 2019. № 8. С. 1152-1158.
Сорокин С. В., Авдиенко П. С., Седова И. В., Кириленко Д. А., Яговкина М. А., Смирнов А. Н., Давыдов В. Ю., Ivanov S.
Gridchin V., Kotlyar K., Reznik R. et al., Nanotechnology 2021 Vol. 32 No. 33 Article 335604
InGaN nanostructures are among the most promising candidates for visible solid-state lighting
and renewable energy sources. To date, there is still a lack of information about the influence of
the growth conditions on the physical properties of these nanostructures. Here, we extend the
study of InGaN nanowires growth directly on Si substrates by plasma-assisted molecular beam
epitaxy. The results ...
Added: August 30, 2021
Yurasov D. V., Baidakova N. A., Verbus V. A. et al., Semiconductors 2019 Vol. 53 No. 10 P. 1324-1328
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Соловьев В. А., Чернов М. Ю., Комков О. С. et al., Письма в Журнал экспериментальной и теоретической физики 2019 Т. 109 № 6 С. 381-386
Методом молекулярно-пучковой эпитаксии на подложках GaAs (001) выращены метаморфные квантово-размерные гетероструктуры InAs(Sb)/InGaAs/InAlAs с тонкими (1–5 нм) сильнонапряженными вставками GaAs и InAs в градиентном метаморфном буферном слое InxAl1−xAs. Показано, что использование вставки GaAs толщиной 5 нм в области метаморфного буферного слоя при x∼0.37 приводит к почти двукратному возрастанию интенсивности фотолюминесценции при 300 К (λ∼3.5мкм) из квантовой ямы InAs/InGaAs, содержащей монослойную вставку InSb. ...
Added: May 31, 2021
Юрасов Д. В., Байдакова Н. А., Verbus V. A. et al., Физика и техника полупроводников 2019 Т. 53 № 10 С. 1360-1365
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Blokhin S., Неведомский В. М., Бобров М. А. et al., Физика и техника полупроводников 2020 Т. 54 № 10 С. 1088-1096
The GaAs-InGaAsP heterointerfaces formation have been studied and optimized using a direct intermolecular wafer bonding (fusion)of an active region heterostructure on an InP substrate and distributed Bragg reflector heterostructures on GaAs substrates for the fabrication of hybrid heterostructures of long-wave vertical-cavity surface-emitting lasers (VCSEL). The heterostructures were grown by solid-source molecular beam epitaxy. It was ...
Added: December 10, 2020
Рахлин М. В., Беляев К. Г., Климко Г. В. et al., Письма в Журнал экспериментальной и теоретической физики 2019 Т. 109 № 3 С. 147-151
Исследована статистика фотонных корреляций излучения одиночных квантовых точек InAs/AlGaAs, выращиваемых методом молекулярно-пучковой эпитаксии, для эффективного вывода излучения из которых формировались волноводные AlGaAs наноантенны. На основе таких фотонных наноструктур реализован источник одиночных фотонов для красной спектральной области со средней интенсивностью, превышающей 5 МГц, и значением корреляционной функции второго порядка при нулевой задержке g(2)(0)=0.08. Степень неразличимости последовательно излученных фотонов, измеренная ...
Added: May 31, 2021
Луценко Е. В., Ржеуцкий Н. В., Нагорный А. В. et al., Квантовая электроника 2019 Т. 49 № 6 С. 535-539
Исследованы стимулированное излучение и фотолюминесценция сверхтонких квантовых ям GaN с номинальной толщиной 1.5–2 монослоя (МС) и барьерными слоями AlN толщиной 4–6.66 МС, полученных с помощью плазменно-активированной молекулярно-пучковой эпитаксии на подложках c-сапфира. Получено стимулированное излучение ТЕ поляризации в сверхтонких квантовых ямах GaN/AlN при накачке непосредственно в квантовые ямы. Длина волны стимулированного излучения варьировалась от 262 до ...
Added: February 25, 2021
Kalmykov A., Melentiev P., Balykin V., Laser Physics Letters 2020 Vol. 17 No. 4 P. 045901
In this paper we present measurements and comparison of SPP propagation length at the practically important telecom wavelength (1560 nm) as well as in the near-infrared and visible spectral ranges. The measurements were carried out for plane SPP waves excited on Ag film surface using optical microscopy of SPP waves in the far field. We ...
Added: January 15, 2021
Казанцев Д. В., Казанцева Е. А., Кузнецов Е. В. et al., Известия РАН. Серия физическая 2017 Т. 81 № 12 С. 1709-1714
Описаны принципы работы безапертурного сканирующего микроскопа ближнего оптического поля (ASNOM). Зондом в приборе служит металлизированная игла атомно-силового микроскопа, и оптическое взаимодействие с объектами на поверхности локализовано вблизи ее острия размером в несколько нанометров. Тело иглы имеет длину в несколько микрон, и это обеспечивает высокую эффективность ее электромагнитного взаимодействия с падающими на нее извне и излучаемыми ...
Added: December 6, 2020
Bodrova A., Osinsky A., Brilliantov N., Scientific Reports 2020 Vol. 10 Article 693
We study analytically and numerically the distribution of granular temperatures in granular mixtures for
different dissipation mechanisms of inelastic inter-particle collisions. Both driven and force-free systems
are analyzed. We demonstrate that the simplified model of a constant restitution coefficient fails to
predict even qualitatively a granular temperature distribution in a homogeneous cooling state. At the
same time we reveal ...
Added: February 25, 2020
Boldyrev K., Романов А., Хаула Е. et al., Journal of the American Ceramic Society 2019 Vol. 102 No. 5 P. 2745-2751
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does ...
Added: February 8, 2019
M. : Faculty of Physics, MSU, 2017
The Low Temperature Physics Conference is an international event held every three years, under the auspices of the IUPAP through its Commission C5 on Low Temperature Physics. The aim of these conferences is to exchange information and views among the members of the international scientific community in the general field of Low Temperature Physics. It ...
Added: October 1, 2017
Budkov Y., Kolesnikov A. L., Polymer Science - Series C 2018 Vol. 60 No. Supplement 1 P. 148-159
Theoretical models of the conformational behavior of flexible polymer chains in mixed solvents enunciated in the world literature during the last decade are critically reviewed. Models describing different mechanisms of coil-to-globule transitions in a good solvent induced by cosolvent addition are highlighted. Special attention is given to the analysis of theoretical approaches to describing the ...
Added: November 30, 2018
Antipov A., Seleznev V., Vakhtomin Y. et al., IOP Conference Series: Materials Science and Engineering (MSE) 2020 Vol. 781 No. 1 P. 012011-1-012011-5
Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 µm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures ...
Added: December 10, 2020
A.Aronin, Abrosimova G., Materials Letters 2017 Vol. 206 P. 64-66
To obtain a correct estimate of the microhardness dependence on the size of nanocrystals, the microhardness
of amorphous-nanocrystalline samples with the same fraction of the crystalline phase and the same
composition of the amorphous matrix but different sizes of nanocrystals was studied. It is shown that the
dependence of microhardness on the nanocrystal size in the size range ...
Added: February 22, 2018
Ермилов А. И., Ivashov E., Международный журнал экспериментального образования 2014 № 1 С. 98-101
Devices of nanorelocation with the probes, the executing operations necessary for formation of quantum points are developed. Options of execution of devices are shown. ...
Added: January 20, 2014
Kuzmin N. N., Maltsev V. V., Volkova E. A. et al., Inorganic Materials 2020 Vol. 56 No. 8 P. 828-835
We have studied and optimized conditions for spontaneous flux growth of TbCr3(BO3)4 crystals.
Phase relations in the pseudoternary system TbCr3(BO3)4–K2Mo3O10–B2O3 have been studied in the temperature
range 900–1130°C and the single-phase terbium chromium borate crystallization field has been
mapped out. It has been shown that increasing the TbCr3(BO3)4 content of the starting high-temperature
solution leads to a rhombohedral-to-monoclinic phase ...
Added: October 22, 2020
Terekhovich V., Эпистемология и философия науки 2019 Т. 56 № 1 С. 169-184
The framework of simple opposition realism - anti-realism is not enough to analyze the views on the reality of unobservable objects of quantum theory. First, it is necessary to distinguish between realism in relation to the theory and realism in relation to the theory’s objects. Secondly, realism in relation to classical objects can be combined, ...
Added: February 12, 2020
Бланк В. Д., Boldyrev K., Денисов В. Н. et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 102 P. 115153-1-115153-10
The electronic band structure of the phosphorus-doped high-quality high-pressure and high-temperature–
grown single crystal diamond was studied by infrared absorption, magneto- and electron paramagnetic resonance
spectroscopy, and first-principles calculations. The complete picture of the 1s → np± and 1s → np0 (n = 2, 3,
4) donor transitions with new 1s →3p0,4p0 and 1s →4p± transitions allowed us ...
Added: October 22, 2020
K. I. Kugel, Bianconi A., Poccia N. et al., Superconductor Science and Technology 2015 Vol. 28 No. 2 P. 024005-1-024005-8
The arrested nanoscale phase separation in a two-band Hubbard model for strongly correlated charge carriers is shown to occur in a particular range in the vicinity of the topological Lifshitz transition, where the Fermi energy crosses the bottom of the narrow band and a new sheet of the Fermi surface related to the charge carriers ...
Added: March 12, 2016
Dziom V., Shuvaev A. V., Shchepetilnikov A. et al., Physical Review B: Condensed Matter and Materials Physics 2019 Vol. 99 No. 4 Article 045305
The integer quantum Hall effect is a well-studied phenomenon at frequencies below about 100 Hz. The plateaus in high-frequency Hall conductivity were experimentally proven to retain up to 33 GHz, but the behavior at higher frequencies has remained largely unexplored. Using continuous-wave terahertz spectroscopy, the complex Hall conductivity of GaAs/AlGaAs heterojunctions was studied in the ...
Added: December 11, 2020
Демин А. С., Масляев С. А., Пименов В. Н. et al., Физика и химия обработки материалов 2017 № 6 С. 5-17
Изучено влияние облучения в установке Плазменный фокус PF-1000 экстремальными энергетическими потоками быстрых ионов дейтерия (Ei≈100 кэВ, плотность мощности qi≈1011-1012 Вт/см2, длительность импульса ti≈10-50 нс) и дейтериевой плазмы (qpl≈109- 1010 Вт/см2, tpl≈50-100 нс) на структуру поверхностного слоя молибденовой пластины с учетом его плавления, частичного испарения и закалки расплава. На облученной поверхности обнаружено образование капельных структур, пор, ...
Added: December 25, 2017
Kuzmichev S. A., Kuzmicheva T. E., Tchesnokov S. N. et al., Journal of Superconductivity and Novel Magnetism 2016 Vol. 29 No. 4 P. 1111-1116
We present temperature dependences of the large and the small superconducting gaps measured directly by SnS-Andreev spectroscopy in various Fe-based superconductors and MgB2. The experimental L,S(T ) are wellfitted with a two-gap model based on Moskalenko and Suhl system of equations (supplemented with a BCS integral renormalization). From the fitting procedure, we estimate the key ...
Added: March 19, 2016
M.Yu. Kagan, JETP Letters 2016 Vol. 103 No. 11 P. 728-738
In this short review, we first discuss the results, which are mainly devoted to the generalizations of the famous Kohn–Luttinger mechanism of superconductivity in purely repulsive fermion systems at low electron densities. In the context of repulsive-U Hubbard model and Shubin–Vonsovsky model we consider briefly the superconducting phase diagrams and the symmetries of the order parameter ...
Added: November 18, 2016