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Analysis of the lasing characteristics of InGaAs/GaAs WGM microlasers
P. 012096.
We present an analysis of spectral and threshold characteristics of InGaAs/GaAs
quantum well-dot microdisk laser operated under cw current injection at room temperature
without external cooling. The experimental values of the threshold current for the disk and
ring microlasers are compared. We observe that the threshold current can be significantly
decreased in devices with large diameters (more than 30 m) by using the ring geometry
Keywords: microlaser
Publication based on the results of:
In book
Vol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation. , Bristol: Institute of Physics Publishing (IOP), 2020.
Babichev A., Bobrov M., Vasil'ev A. et al., Applied Physics Letters 2026 Vol. 128 No. 24 Article 241102
High-quality planar cavities with low-absorption mirrors based on Al0.2Ga0.8As/Al0.9Ga0.1As layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and the quality-factor at the threshold are 4.2 kW/cm2 and 6800. Increasing the pump level above two thresholds results in an enlargement in the quality-factor to at least 19 ...
Added: July 8, 2026
Babichev A., Makhov I., Kryzhanovskaya N. et al., IEEE Journal on Selected Topics in Quantum Electronics 2026 Vol. 32 No. 6 Article 1700208
Micropillar cavity lasers demonstrate operation up to 255 K. At this temperature, the lasing threshold and Q-factor, extracted at lasing threshold for a 4 μm diameter pillar are about 2 mW and 16800. For pillar lasers, the concept of which is based on an optical aperture, continuous-wave lasing is realized at room temperature (300 K). ...
Added: March 23, 2026
Makhov I., Komarov S., Fominykh N. et al., Optics Letters 2025 Vol. 50 No. 2 P. 387–390
Fabry–Perot (FP) lasers with a cavity length shorten down to 50 μm were investigated. One or two laser mirrors were
formed by focused ion beam etching. InGaAs quantum dots of high density were used as the laser active region. The
lasers operate in a pulsed regime up to at least 105°S. A comparison with lasers formed by ...
Added: January 9, 2025
Moiseev E., Ivanov K., Khabibullin R. et al., Optics and Laser Technology 2025 Vol. 183 Article 112299
We demonstrate that microlasers with an anisotropic cavity (limaçon- or quadrupole-shaped) containing quantum well-dots in the active region are able to operate under continuous wave current injection at 90 °C. Deviation of the cavity shape from circular leads to the directionality of the emission in the lateral direction, while the quality factor of the structures and ...
Added: December 23, 2024
N. V. Kryzhanovskaya, K. A. Ivanov, N. A. Fominykh et al., Journal of Applied Physics 2023 Vol. 134 No. 10 Article 103101
We report on InGaAs/GaAs quantum dot injection microdisk lasers laterally connected with a bus waveguide fabricated by planar technology from the same epi-structure. Various coupling schemes of microlaser with waveguide are studied including a microlaser attached to a waveguide (zero gap), a 100 nm gap for evanescence light outcoupling, and with a waveguide surrounding the ...
Added: October 30, 2023
A.S. Dragunova, N.V. Kryzhanovskaya, F. I. Zubov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.2 P. 108–113
In this work, we study the characteristics of semiconductor microlasers based on the heterostructure with two coupled waveguides intended to improve heat dissipation in cw regime. We analysed total output optical loss of the microlasers, their spectral characteristics, output power, emission pattern and thermal resistance. We observed that the use of the principle of two ...
Added: July 3, 2023
N.A. Fominykh, F.I. Zubov, K.A. Ivanov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.2 P. 126–132
In the present work, we study the possibility of the emission output of a semiconductor microring laser through a radially coupled optical waveguide. Room temperature lasing has been achieved in continuous wave regime with the wavelength of ~1090 nm. The characteristics of microlasers with and without waveguide have been compared. We have performed a spatial ...
Added: July 3, 2023
Kryzhanovskaya N., Moiseev E., Dragunova A. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 371–375
In this work, we study III-V p-i-n photodetectors and disk microlasers in terms of their static and small-signal modulation frequency response. InGaAs/GaAs quantum welldots (QWDs) are used as the active region of the devices to provide operation wavelength around 1.1 µm, high optical and frequency response and temperature stability of characteristics. 30 µ m-in-diameter microdisk ...
Added: March 14, 2023
Dragunova A., Kryzhanovskaya N., Moiseev E. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 163–166
In this work we study characteristics of the III-V microdisk lasers bonded onto silicon board. The bonding of microdisk lasers to the silicon substrate reduces their thermal resistance. Here we show improvement in output power, lasing threshold, dynamic characteristics and energy consumption in microdisk lasers with diameters of 31 μm and 19 μm by comparison ...
Added: March 14, 2023
Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov et al., IEEE Photonics Technology Letters 2022 Vol. 34 No. 24 P. 1349–1352
We report on the fabrication and studies of
Ø100 μm half-disk lasers with an active region based on
InGaAs/GaAs quantum dots providing very high modal gain.
Such resonators support whispering gallery modes propagating
at the cavity periphery. The microlasers show directional light
outcoupling: continuous-wave output power emitted from the
flat side reaches 17 mW, which is about 7 times greater than
the ...
Added: December 13, 2022
Isaev N. K., E. I. Moiseev, N. A. Fominykh et al., , in: 8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021.: Institute of Physics Publishing (IOP), 2021. Ch. 012082.
Added: October 26, 2022
Makhov I., Бекман А. А., Кулагина М. М. et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40–43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 12 С. 1223–1228
The rate equations are used to analyze the characteristics
of a tandem consisting of a laser diode and a semiconductor
optical amplifier made of a single heterostructure with quantum
dots. The optimal value of the current distribution coefficient
the amplifier and the laser, as well as the optimal resonator
length that provides the highest output power of the tandem
were determined. ...
Added: November 25, 2021
Зубов Ф. И., Максимов М. В., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3–6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30–33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28–31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Light: Science and Applications 2021 Vol. 10 P. 1–11
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with ...
Added: April 19, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37–39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 2 С. 195–200
Analytical expressions are presented, and, through them, the analysis of component parts of the electrical resistance of injection microdisk lasers is carried out depending on the size of the microdisk resonator, parameters of the substrate, and configuration of the contact to it. ...
Added: March 11, 2021