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Analysis of the lasing characteristics of InGaAs/GaAs WGM microlasers

P. 012096.
Kryzhanovskaya N., Moiseev E., Zhukov A., Maksimov M. V.

We present an analysis of spectral and threshold characteristics of InGaAs/GaAs
quantum well-dot microdisk laser operated under cw current injection at room temperature
without external cooling. The experimental values of the threshold current for the disk and
ring microlasers are compared. We observe that the threshold current can be significantly
decreased in devices with large diameters (more than 30 m) by using the ring geometry

Language: English
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DOI
Text on another site
Keywords: microlaser
Publication based on the results of:
Optoelectronic devices for optical interconnects and optical on-chip systems based on semiconductor nanomaterials (2020)

In book

7th International School and Conference "Saint-Petersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and Nanostructures
Vol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation. , Bristol: Institute of Physics Publishing (IOP), 2020.
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