Automatized setup for researching of MIS structures under high-field tunnel injection of electrons at stress and measurement conditions

Ch. 8337209. P. 1–3.

Andreev D. V., Bondarenko G.G., Andreev V. V., Stolyarov A. A.

In this work we have developed an experimental
automatized setup based on PXI platform and LabVIEW by
National Instruments to investigate parameters of thin dielectric
films of MIS structures. The setup allows to implement the
method of high-field tunnel injection of charge carriers under the
stress and measurement modes. For the method the main
injection of charge into gate dielectric is realized under stress
modes at which either voltage, applied to the gate, or current,
flowing through the dielectric, is held constant. In order to obtain
additional information about changing of charge state of MIS
structure one should analyze not only time dependencies of
currents and voltages during the stress conditions but, besides, a
change of current-voltage characteristics of MIS structure which
are acquired before and after injection at measurement level of
currents and voltages that are significantly lower than stress
levels. As a result, charge effects, which can be observed in MIS
structure at the time of stress mode setting, become available to
be researched. Besides, that makes possible to take into account
an influence of the charge effects to a change of the charge state
of gate dielectric under high-field injection of charge carriers.

Keywords: МДП-структура, зарядовое состояние, charge state, инжекция электронов, MIS-structure, injection of electrons

In book

2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings

M.: IEEE, 2018.