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Complex for automated measurement and processing of BJTs and MOSFETs characteristics for extremal applications
P. 1-4.
The paper describes the features of an automated system for measurement and processing of electrical characteristics of BJTs and MOS transistors in the presence of thermal and radiation effects. Automation is made possible with employing of long measurement cables and a ramified scripting system. The system is based on a set of measuring instruments, methods of measurements and processing of results for transistors of various types. Shown are the examples of the system usage for studying BJTs and MOSFETs, determining the SPICE-model parameters.
In book
M. : HSE, 2016
Mamed R. Ismail-zade, Aleksandr Y. Romanov, Egor Y. Kuzin et al., , in : Proceedings of the 2017 IEEE Russia Section Young Researchers in Electrical and Electronic Engineering Conference (2017 ElConRus). * 2.: M. : IEEE, 2017. P. 423-428.
Hardware-software system designed for automated SOI MOSFETs characteristics measurement, processing and SPICE model parameter extraction taking into account high temperature (HT) effects (to 300°C) is presented. The essence of the system is comprised of a set of selected measurement instru-ments, measurement and data processing methods with the pur-pose of SPICE model library creation in lightly ...
Added: March 6, 2017
Konstantin O. Petrosyants, Kharitonov I. A., Sambursky L. M., , in : EUROSOI-ULIS2015 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon January 26-28, 2015 - Bologna, Italy. : Bologna : IEEE, 2015. P. 305-308.
Universal SPICE model for submicron SOI/SOS
MOSFETs based on BSIMSOI and EKV-SOI platforms with
account for total ionizing dose-induced effects (TID), pulsed
radiation effects, single events is presented. A special subcircuit
consisting of parasitic transistors for sidewall and backgate
leakage currents and other elements is connected to the standard
SPICE model. In addition, the radiation-dependent parameters
are described by physically based mathematical ...
Added: March 12, 2015
Petrosyants K. O., Sambursky L. M., Kozhukhov M. et al., IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2021 Vol. 40 No. 4 P. 708-722
The temperature range of SPICE models of bipolar and field-effect transistors is extended from the standard commercial level (-60...+150 °C) to harsh conditions level (-200...+300 °C) for low/high temperature ICs design. This is done by including additional equations for temperaturedependent parameters, and by connecting additional elements to the device equivalent circuit to take into account ...
Added: October 1, 2020
Petrosyants K. O., Kharitonov I. A., Sambursky L. M., Advanced Materials Research 2013 Vol. 718–720 P. 750-755
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures ...
Added: January 23, 2014
Petrosyants K. O., В кн. : Математическое моделирование в материаловедении электронных компонентов МММЭК–2021. : М. : МАКС Пресс, 2021. С. 112-116.
Added: November 30, 2021
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183-194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
Petrosyants K. O., Kharitonov I. A., Sambursky L. M., , in : Book of Abstracts of the 3rd International Conference on Advanced Measurement and Test , Xiamen, China, March 13-14, 2013. : Xiamen : [б.и.], 2013. P. 35-36.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. ...
Added: April 29, 2013
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42-45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
50584562, M.V. Kozhukhov, , in : PROBLEMS OF ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS DEVELOPMENT (MES) SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016 Part IV, Design of Electron Component Base. * Part IV: SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016.: M. : ., 2017. Ch. 1. P. 2-10.
Novel TCAD and SPICE models of the Si BJTs and the SiGe HBTs taking into account influence of neutrons, protons, and gamma radiation on the device characteristics were developed. The interaction between TCAD and SPICE device models in radiation-hardened IC design flow was considered. The complete set of I-V, C-V, fT, fmax of BJT/HBT characteristics ...
Added: October 25, 2017
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., В кн. : Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2018). Вып. 3.: М., Зеленоград : ИППМ РАН, 2018. С. 111-117.
A set of modified compact spice models of field effect transistors is presented: with isolated gate (MOSFET) and with pn junction control (JFET) for circuit simulation in a temperature range of -200°C, which is important for space applications. All models are constructed using the approach combining macromodeling based on the standard models available in the ...
Added: October 21, 2018
Petrosyants K. O., Sambursky L. M., Kharitonov I. A. et al., , in : Proceedings of XV IEEE East-West Design & Test Symposium (EWDTS'2017). : Piscataway : IEEE, 2017. P. 504-511.
In this work features of measurement, processing and analysis of electrical characteristics of MOSFET’s subjected to various kinds of static irradiation (neutron, electron, and -rays) and temperature in the extended high/low ranges are analyzed. As a result a unified (with account for radiation and temperature) automated measurement, parameters extraction and modeling system is developed, which ...
Added: October 29, 2017
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., В кн. : Математическое моделирование в материаловедении электронных компонентов МММЭК–2021. : М. : МАКС Пресс, 2021. С. 117-120.
The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...
Added: November 5, 2021
Konstantin O. Petrosyants, Lev M. Sambursky, Igor A. Kharitonov et al., Journal of Electronic Testing: Theory and Applications (JETTA) 2017 Vol. 33 No. 1 P. 37-51
The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI/SOS CMOS IC’s is presented. It is realized at three levels: CMOS devices – typical analog or digital circuit fragments – complete IC’s. For this purpose, a universal compact SOI/SOS MOSFET model for SPICE simulation software with account for TID, dose rate ...
Added: February 16, 2017
Вологдин Э. Н., Lysenko A. P., М. : МИЭМ НИУ ВШЭ, 2018
The main content of the training manual is:
consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors,
Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients),
the effect of nuclear reactions and fast annealing on the parameters of transistors is considered;
Classification ...
Added: March 16, 2018
Petrosyants K. O., Kharitonov I. A., Lebedev S. et al., Microelectronics and Reliability 2017 Vol. 79 P. 416-425
I-V characteristics and reliability parameters for the set of hardened SOIMOSFET'swith special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range up to 300 °C. The reliability aspects under test for MOSFET's are threshold voltage shift, subthreshold slope and mobility degradation, gate leakage current ...
Added: February 28, 2018
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., Cryogenics 2020 Vol. 108 P. 1-6
Compact Si JFET model for SPICE circuit simulation in the extended temperature range from 373 K down to 73 K (+100 °C…−200 °C) is proposed. It is based on the standard JFET model Level = 3 (Statz model) with the full set of temperature-dependent parameters in the cryogenic temperature range. The universal procedure for model ...
Added: April 24, 2020
Smirnova D., Kuksin A., Starikov S. et al., Modelling and Simulation in Materials Science and Engineering 2013 Vol. 21 No. 035011 P. 1-24
A new interatomic potential for a uranium–molybdenum system with xenon is developed in the framework of an embedded atom model using a force matching technique and a dataset of ab initio atomic forces. The verification of the potential proves that it is suitable for the investigation of various compounds existing in the system as well ...
Added: March 19, 2014
Petrosyants K. O., Kozhukhov M., Dvornikov O. et al., , in : 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings. : M. : IEEE, 2018. Ch. 380. P. 1-4.
A unified SPICE macromodel of the SiGe HBTs taking into account radiation effects is presented. It consists of two parts: 1) the standard core model (GP, VBIC, HICUM, MEXTRAM) selected by the designer; 2) an additional subcircuit taking into account the radiation-induced current and voltage shifts. The macromodel was included on SPICE-like simulators. The advantages of SPICE-RAD ...
Added: May 30, 2018
Lev M. Sambursky, Mamed R. Ismail-zade, Nina V. Blokhina, , in : 2020 Moscow Workshop on Electronic and Networking Technologies (MWENT). : IEEE, 2020. P. 1-7.
In this paper, we do an early study of circuit parameter variation for temperature-resistant SOI CMOS production technology on the examples of several standard circuit fragments. Circuits electrical characteristics are simulated at several values of temperature (in the range +27…+300 °C) and with account for MOSFET parameter mismatch figures derived from measurement data. The method ...
Added: May 7, 2020
Yurin A., Кожевников А. Ю., В кн. : Инновационные, информационные и коммуникационные технологии. Сборник трудов XIV Международной научно-практической конференции, 1-10 октября 2017 года, Россия, г. Сочи. : М. : Ассоциация выпускников и сотрудников ВВИА им. проф. Жуковского, 2017. С. 84-86.
The paper presents an example of creation of the automated measuring complex, designed to control the parameters of transformers. An example of determining the structure of the automated measuring complex with method of analysis of hierarchies. ...
Added: January 18, 2018
Petrosyants K. O., Kharitonov I. A., , in : Proceedings 16th Euromicro Conference on Digital System Design DSD 2013 Proceedings of the 16th Euromicro Conference on Digital System Design (DSD 2013) Santander, Spain. : Santander : IEEE Computer Society Conference Publishing Services (CPS), 2013. P. 479-482.
A method of account for radiation effects (total dose and particle fluence) in signal integrity analysis of digital system by using IBIS model is presented. It is shown that account for these effects in IBIS models can be performed by correction the input impedances of protection circuits (GND_Clamp and POWER_Clamp), output MOSFETs (PULL_UP, PULL_DOWN) characteristics ...
Added: October 15, 2013
Yurin A., Вишняков Г. Н., Minaev V., Оптический журнал 2022 Т. 89 № 12 С. 13-18
Subject of study. A method for measuring the refractive index using an automated autocollimation goniometric system. Aim of study. Simplification of the procedure for precision measurements of the refractive index of transparent solid and liquid optical materials. Method. To measure the refractive index of triangular prisms, goniometric methods based on measuring the angles of refraction ...
Added: November 17, 2022
Piscataway : Institute of Electrical and Electronic Engineers, 2015
The RADECS conference and workshops address technical issues related to radiation effects on devices, integrated circuits, sensors, and systems, as well as radiation hardening, testing, and environmental modeling methods. Papers from the events are published in a biennial issue of the IEEE Transactions on Nuclear Science journal.
Presented papers describe significant new findings in the ...
Added: February 16, 2016