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Electro-thermal Design of Smart Power Devices and Integrated Circuits
Advanced Materials Research. 2014. Vol. 918. P. 191-194.
An efficient methodology of electro-thermal design of smart power semiconductor
devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for
2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and
high power elements, temperature sensors, IC chips simulation are considered
Research target:
Electronics and Electrical Engineering
Priority areas:
engineering science
Language:
English
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 402-403
The paper presents a library of radiation and electrothermal BJT and MOSFET VLSI SPICE models. The library contains models for MOSFET, SOI/SOS MOSFET, Si BJT, SeGe HBT taking into account self-heating, high (up to +300°C) and low (up to –200°C) temperatures, the influence of radiation (neutrons, electrons, γ- and X-ray, protons, pulsed radiation, single particles). ...
Added: January 30, 2019
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42-45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Петросянц К. О., Козынко П. А., Рябов Н. И. et al., М. : Солон-Пресс, 2017
Рассмотрены принципы работы и электрические характеристики биполярных и МОП-транзисторов интегральных схем, базовых элементов цифровой и аналоговой схемотехники, БМК и ПЛМ, микроконтроллеров и микропроцессоров. Описаны методики выполнения лабораторных, расчетных на ЭВМ, курсовых, самостоятельных и др. работ. Пособие предназначено для бакалавров и магистров различных специальностей, изучающих электронику, микроэлектронику и схемотехнику; отдельные разделы могут быть полезными для аспирантов ...
Added: February 28, 2017
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404-405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019
Lebedev S. V., Petrosyants K. O., Stahin V. G. et al., Наноиндустрия 2018 № 82 С. 412-414
The paper summarizes requirements to SPICE models, simulation tools, aspects of model parameter extraction for design of low voltage, ultra-low power CMOS ICs. It presents the results of 2NAND circuit (L = 0.35mkm) simulation for supply voltage reduced from 0.7V to 0.3V. Their logical performance capabilities have been shown for the lowest value of supply ...
Added: January 30, 2019
Petrosyants K. O., Kozhukhov M., Popov D., Sensors and Transducers 2018 Vol. 227 No. 11 P. 42-50
The special library of radiation damage models for physical parameters and electrical characteristics of bipolar and MOS transistor and sensor structures taking into account neutron, gamma and proton irradiation is developed and built-into Sentaurus Synopsys software tool. For different BJTs/HBTs, MOSFETs and radiation sensors the good agreement to simulated and experimental electrical characteristics is achieved. ...
Added: October 22, 2018
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379-385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
Zhadnov V. V., Artyukhova M. A., Надежность 2015 № 1 С. 13-18
The article deals with forecasting the dependability indicators of state-of-the-art spacecraft onboard equipment. The authors demonstrate the applicability of the results of equipment and components testing for resistance to ionizing radiation in forecasting dependability indicators. They prove the applicability of Alfa distribution of time to failure in forecasting CMOS IC reliability and longevity. The paper ...
Added: January 20, 2015
Petrosyants K. O., Kharitonov I. A., Sambursky L. M., Advanced Materials Research 2013 Vol. 718–720 P. 750-755
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures ...
Added: January 23, 2014
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Zhadnov V. V., Artyukhova M. A., Надежность 2015 No. 1 P. 19-24
The article deals with forecasting the dependability indicators of state-of-the-art spacecraft onboard equipment. The authors demonstrate the applicability of the results of equipment and components testing for resistance to ionizing radiation in forecasting dependability indicators. They prove the applicability of Alfa distribution of time to failure in forecasting CMOS IC reliability and longevity. The paper ...
Added: January 20, 2015
Piscataway : Institute of Electrical and Electronic Engineers, 2015
The RADECS conference and workshops address technical issues related to radiation effects on devices, integrated circuits, sensors, and systems, as well as radiation hardening, testing, and environmental modeling methods. Papers from the events are published in a biennial issue of the IEEE Transactions on Nuclear Science journal.
Presented papers describe significant new findings in the ...
Added: February 16, 2016
Petrosyants K. O., Kozynko P., Известия высших учебных заведений. Электроника 2007 № 6 С. 30-38
The automatic electro-thermal simulation has been implemented in Mentor Graphics PCB Design Flow. New program-dispatcher TransPower has been developed to control the electro-thermal calculation process, combining the programs of the electric (Analog Designer) and thermal (BETAsoft) simulation into a single cycle. As a result, the labor consumption and the PCB electro-thermal simulation time have been ...
Added: December 26, 2012
Petrosyants K. O., Popov D., Bykov D., Известия высших учебных заведений. Электроника 2017 Т. 22 № 6 С. 569-581
В работе моделируется воздействие ионизирующего излучения на 45 нм МОП-транзисторы с high-k диэлектриком, изготовленные по технологии на объёмном кремнии и диэлектрической подложке. Разработан и введен набор новых полуэмпирических моделей, учитывающих деградацию радиационно-зависимых параметров от воздействия ионизирующего излучения: подвижность, время жизни, зависимость плотности заряда в объеме SiO2 и HfO2 и на границах HfO2/Si от дозы ионизирующего излучения. ...
Added: October 16, 2017
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386-392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467-469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB ...
Added: March 24, 2020
Kuznetsov V., Kechiev L., IEEE Transactions on Electromagnetic Compatibility 2015 Vol. 57 No. 5 P. 947-954
In this paper, power MOS transistor behavior under charged board model (CBM) ESD impact is considered. The analysis of the MOSFET failure condition at the CBM ESD event is performed. The CBM equivalent circuit is proposed. The physical parameters of the PCB and device under test are replaced by the lumped RCL circuit. The MOSFET ...
Added: January 1, 2016
Kanavets V. I., Mozgovoi Y. D., Khritkin S. A., Известия РАН. Серия физическая 1999 Т. 63 № 12 С. 2333-2339
Added: January 31, 2013
М. : Физический факультет МГУ, 2001
Added: June 15, 2013
Kozhevnikov A., Надежность 2008 № 1 С. 64-71
Рассматривается методология автоматизированного проектирования бортовых радиоэлектронных средств на основе иерархического комплексного системного моделирования. Методология позволяет принимать минимальные по стоимости проектные решения по синтезу допусков и номинальных значений параметров, электрических и тепловых нагрузочных режимов электронных элементов и параметров элементов обеспечения их температурного режима, синтезу систем вибрационной и ударной защиты. Основой методологии являются методы анализа и синтеза ...
Added: October 15, 2013
Petrov V., M. Komarov, D. Moltchanov et al., IEEE Transactions on Wireless Communications 2017 Vol. 16 No. 3 P. 1791-1808
The fifth generation wireless systems are expected to rely on a large number of small cells to massively offload traffic from the cellular and even from the wireless local area networks. To enable this functionality, mm-wave (EHF) and Terahertz (THF) bands are being actively explored. These bands are characterized by unique propagation properties compared with ...
Added: March 12, 2018
Ivashov E., Kravchenko N., Yagovtsev V. et al., Вестник машиностроения, СТИН 2015 № 9 С. 39-42
The method of multipurpose decision making as a problem of fuzzy programming is considered. For expression of desire levels the method of preferences determination of criteria and achievability assessment is used. ...
Added: October 17, 2015