Methods of identification of the form of objects based on the signature analysis and invariant to affine transformations are considered. It is shown as these methods it is possible to apply to surface quality assurance. Questions of sensitivity of these methods are considered. Dependences of these methods on noise are brought.
An efficient methodology of electro-thermal design of smart power semiconductor
devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for
2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and
high power elements, temperature sensors, IC chips simulation are considered
Three types of copper traces for PCBs were investigated: 1) 2.5 μm thin film lines (Ti;Cu;Ni) on aluminium and ceramic (Al2O3) substrates; 2) 2.5 μm thin film lines (Ti;Cu;Ni;Au) on ceramic (Al2O3) substrates; 3) 15 μm traces (Cu;Ni) on polyimide substrate for high density interconnection PCBs. The width of all types of traces was varying in the range of 100-500 μm. The set of temperature-current diagrams for different PCB scenarios are presented and analyzed. The temperature caused by Joule heating was measured using IR camera Flir A40 with macrolens. For different cases the current was set in the range of 0.1-3 A; the measured temperature was in the range of 20-140 oC. The close agreement between the results measured and simulated with ELCUT software tool was achieved.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.
I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables, which introduces noticeable measurement error. In this paper I-V-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2- wire circuits are presented and compared to direct (without cables) measurements. Significant enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.