Protected 0-p states in SIsFS junctions for Josephson memory and logic
We report the observation of a current-phase relation dominated by the second Josephson harmonic in superconductor-ferromagnet-superconductor junctions. The exotic current-phase relation is realized in the vicinity of a temperature-controlled 0-to-π junction transition, at which the first Josephson harmonic vanishes. Direct current-phase relation measurements, as well as Josephson interferometry, non-vanishing supercurrent and half-integer Shapiro steps at the 0-π transition self-consistently point to an intrinsic second harmonic term, making it possible to rule out common alternative origins of half-periodic behavior. While surprising for diffusive multimode junctions, the large second harmonic is in agreement with theory predictions for thin ferromagnetic interlayers.
We investigate numerically the formation of vortex–antivortex pairs in thin-film superconducting strip in the presence of a straight current-carrying wire, oriented perpendicular to this strip. We demonstrate that the change in the number of the trapped vortices/antivortices inside the strip near the current-carrying wire results in a oscillatory dependence of the critical current Ic on the magnitude of the control current Iw in the wire. We consider the effect of the width of the superconducting strip and the width of the control wire on the period and the amplitude of the dc-Josephson-like oscillations of the critical current.
Using the Usadel equation approach, we have calculated the critical current density in ferromagnetic (F) Josephson junctions of different types containing insulating (I) and normal metal (N) layers in the weak link region. Even a thin additional N layer may change the boundary conditions at the SF or IF interface, where S is a superconducting electrode. We show that inserting an N layer may increase the critical current density Jc and shift the 0- transition to larger or smaller values of the thickness dF of the ferromagnet, depending on the boundary parameters.
In the original paper the affiliation of A.S. Aladyshkina was indicated incorrectly. The correct affiliations of all authors are as follows:
A.Yu. Aladyshkin., (1) I.M. Nefedov(1), A.S. Aladyshkina(2) and I.A. Shereshevskii(1). (1) Institute for Physics of Microstructures, Russian Academy of Sciences, GSP.105, Nizhny Novgorod 603950, Russia (2) National Research University Higher School of Economics, 25/12 Bolshaja Pecherskaja Ulitsa, Nizhny Novgorod 603155, Russia
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
By using superconducting quantum interference device (SQUID) magnetometry, we investigated anisotropic high-field (H less than or similar to 7T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d(c) similar or equal to 1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5-2T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. In addition, the inhomogeneous nanoisland FeNi films can possess spontaneous ordering of toroidal moments, which can be either of orbital or spin origin. The system with toroidal inhomogeneity can lead to anomalously strong diamagnetic-like response. The observed magnetization response is determined by the interplay between the paramagnetic-and diamagnetic-like contributions.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.