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Regular version of the site

Book chapter

Применение пакетов программ TCAD и HSPICE для анализа переходных процессов в ячейках КМОП ИС с учетом влияния эффекта саморазгрева

С. 451-458.

CMOS SOI cells transients were simulated using device (TCAD) and circuit (HSPICE) software tools taking into account the self-heating effects.  Effect of signal cycle duration on transistors temperature was analyzed.  MOSFET structures electrical and thermal parameters were defined from the TCAD simulation results and than were used for cell circuit simulation with HSPICE.