Труды международной научно-практической конференции "International Scientific – Practical Conference" INNOVATIVE INFORMATION TECHNOLOGIES", Prague, 2013, April 22-26
The effects of neutron and γ-radiation on characteristics of Si BJT and SiGe HBT are investigated. SPICE-macro models taking into account the effects of neutron and γ-radiation are developed. The modeling results are in good agreement with experimental data.
CMOS SOI cells transients were simulated using device (TCAD) and circuit (HSPICE) software tools taking into account the self-heating effects. Effect of signal cycle duration on transistors temperature was analyzed. MOSFET structures electrical and thermal parameters were defined from the TCAD simulation results and than were used for cell circuit simulation with HSPICE.
In this paper some of the task assignment methods and approaches are examined. The analysis of the algorithms considered is showing their strengths and weaknesses. Also, the ways of further research are presented, which aims to develop a methodology for task assignment in project management area.