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TCAD analysis of self heating effects in bulk silicon and SOI n-MOSFETs

P. P1–08.
Petrosyants K. O., Orekhov E. V., Kharitonov I. A., Popov D.

3D device simulations accounting for self-heating effects in bulk silicon and SOI n-MOSFET’s with 0.1 um gate size were performed. The temperature distribution in the transistors channels and the maximum operation temperature were acquired. The self-heating effect in the SOI MOSFET with different active silicon film thickness was investigated.

Language: English
Full text
Keywords: TCADМОП-транзисторMOSFETSOITCADself-heating effectКНИэффект саморазогрева

In book

International Conference “Micro- and Nanoelectronics – 2012” Book of abstracts.
M.: ФТИАН, 2012.
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Added: March 24, 2020
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