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Regular version of the site

Book chapter

TCAD analysis of self heating effects in bulk silicon and SOI n-MOSFETs

P. P1-08.

3D device simulations accounting for self-heating effects in bulk silicon and SOI n-MOSFET’s with 0.1 um gate size were performed. The temperature distribution in the transistors channels and the maximum operation temperature were acquired. The self-heating effect in the SOI MOSFET with different active silicon film thickness was investigated.