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Extension of the Capabilities of SPICE Analysis Tools for Electro-Thermal Simulation of Power Electronic Circuits
P. 1–5.
Igor Kharitonov, Gleb Klopotov, Valentin Kobyakov, Michael Tegin, Evelina Silchenko, Konstantin Ivlev, Dmytry Loktionov
In book
M.: IEEE, 2022.
Manohin A., Электрооборудование: эксплуатация и ремонт 2026 № 2 С. 75–85
An extended method for calculating heat transfer coefficients using programs
for automated analysis of the thermal regime of TRIANA (ASONIKA-T) radio-electronic
equipment for various designs is proposed. Based on the analysis of the obtained
heat transfer coefficients, it is shown how to set realistic values for the convective
heat transfer coefficient in SOLIDWORKS Simulation and other CAE thermal analysis
systems. ...
Added: April 3, 2026
Petrosyants K. O., Kozhukhov M., Popov D. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 5 С. 640–657
The operational amplifiers (Op-Amps) are widely used in electronic systems operating under conditions of exposure to ionizing radiation; hence the IC designer has a need to carry out circuit modeling considering radiation factors. The main problem of this method of the Op-Amps simulation is that in SPICE-like programs there are no adequate models of bipolar ...
Added: November 6, 2025
Petrosyants K. O., Kharitonov I. A., Tegin M. S., WSEAS Transactions on Circuits and Systems 2023 Vol. 22 P. 126–134
A scheme of automated multi-level electro-thermal modeling of power PCB modules using software tools Comsol at the device construction level, SPICE tool at the circuit level, and Asonika-TM tool at board level was proposed to improve the conventional design approach. The effectiveness of the proposed methodology is demonstrated in the example of electro-thermal analysis of ...
Added: November 6, 2025
Petrosyants K. O., Silkin D. S., D. A. Popov et al., Russian Microelectronics 2024 Vol. 53 No. 7 P. 737–743
With a decrease in the size of transistors, the conditions arise when the impact of one particle affects several transistors in the composition of a memory cell. Therefore, during simulation it is not sufficient to take into account one transistor directly hit by a particle. In this study, a full-size 3D model of two n-channel transistors ...
Added: November 6, 2025
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., , in: 2025 31st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 24-26 Sept. 2025.: IEEE, 2025. P. 1–4.
The temperature range of the core industry standard ASM model for GaN HEMTs is extended from the standard commercial level (−60∘C to+150∘C) to extreme low and high level (−269∘C…+500∘C) for low- and high-temperature ICs design. This is done by including additional equations for temperature-dependent parameters. The good agreement between simulated and measured device characteristics is achieved. The RMS error is not more ...
Added: November 5, 2025
Kharitonov I. A., Kofanov Y. N., Тегин М. С., Наноиндустрия 2023 Т. 16 № S9-1(119) С. 189–196
The paper presents a set of developed software tools to provide joint electro-thermal modeling of power electronic circuits on PCBs using Comsol, SPICE, Asonika-TM software tools. Examples of joint electro-thermal modeling of power electronic circuit on printed circuits have also been presented. ...
Added: May 21, 2023
Konstantin O. Petrosyants, Mamed R. Ismail-zade, Sambursky L. M., , in: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2022. P. 1–4.
The temperature range of SPICE models of sub-100 nm FDSOI MOSFETs and FinFETs is extended from the standard commercial level (-60°C to +150 °C) to extreme low and high level (-200 °C … +300 °C) for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements ...
Added: December 15, 2022
Харитонов И.А., Белопашенцев А.С., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 195–200
Using the enhanced capabilities of SPICE modeling of CMOS circuits and extended SPICE models of MOSFET with account for aging effects, the paper deals with quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers, when the minimum size of transistors is reduced from 180 nm ...
Added: July 7, 2022
Kharitonov I. A., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 2.: ИППМ РАН, 2021. С. 73–80.
Описаны дополнения к стандартным SPICE моделям МОП элементов схем, учитывающие эф-фекты их старения, обусловленные влиянием горячих но-сителей, пробоя диэлектрика и электромиграции. Наборы таких моделей вместе со средствами определения их параметров и средствами SPICE моделирования объ-единены в подсистему SPICE моделирования КМОП схем с учетом факторов старения и оценки параметров надеж-ности и времени бессбойной работы. Приведены примеры ...
Added: June 8, 2022
Kuznetsov E., Golyaev Y., Kolbas Y. et al., Optical and Quantum Electronics 2021 Vol. 53 No. 10 Article 596
In the paper, we consider the ways to improve the quality and economic efficiency of development and production of complex innovative electronic devices, among which are laser gyros (LGs). Development, manufacturing and testing of high-tech LG are relatively expensive. The accurate thermal modeling at the early stages of LG designing is an effec- tive way ...
Added: October 23, 2021
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379–385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
K. O. Petrosyants, M. R. Ismail-Zade, L. M. Sambursky, Russian Microelectronics 2020 Vol. 49 No. 7 P. 501–506
The compact models of junction field effect transistors (JFETs) used in release-quality versions of SPICE-like programs are focused only on the standard temperatures ranging from –60 to 150°C and are unworkable for an electronic circuit design in the cryogenic temperature range (below –120°C). It this study, the Low-T SPICE model of the JFET for designing ...
Added: January 31, 2021
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020