• A
  • A
  • A
  • АБВ
  • АБВ
  • АБВ
  • A
  • A
  • A
  • A
  • A
Обычная версия сайта
  • RU
  • EN
  • HSE University
  • Publications
  • Book chapter
  • Оценка влияния параметров структуры FinFET на электрические характеристики средствами TCAD-моделирования
  • RU
  • EN
Расширенный поиск
Высшая школа экономики
Национальный исследовательский университет
Priority areas
  • business informatics
  • economics
  • engineering science
  • humanitarian
  • IT and mathematics
  • law
  • management
  • mathematics
  • sociology
  • state and public administration
by year
  • 2028
  • 2027
  • 2026
  • 2025
  • 2024
  • 2023
  • 2022
  • 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • 2000
  • 1999
  • 1998
  • 1997
  • 1996
  • 1995
  • 1994
  • 1993
  • 1992
  • 1991
  • 1990
  • 1989
  • 1988
  • 1987
  • 1986
  • 1985
  • 1984
  • 1983
  • 1982
  • 1981
  • 1980
  • 1979
  • 1978
  • 1977
  • 1976
  • 1975
  • 1974
  • 1973
  • 1972
  • 1971
  • 1970
  • 1969
  • 1968
  • 1967
  • 1966
  • 1965
  • 1964
  • 1963
  • 1958
  • More
Subject
News
September 9, 2026
‘Balkan Hospitality Opens Doors: Studying Dialects on the Verge of Extinction
You cannot study spoken dialects from books. Instead, you need to go to a village, seek out its elders, and earn the trust of local residents before you can record hours of spontaneous stories. This is how Natalia Muravleva, Associate Professor at the Faculty of Humanities, conducts her research. Her internship in Serbia continued her long-standing study of dialects spoken by Macedonian settlers. In this interview, she discusses how diaspora cultural centres help researchers reach informants, why native speakers need to be interviewed only in their own language (otherwise, as she puts it, they may 'break'), and how a single field season helped her finalise her monograph. She also shares warm memories of autumn in Belgrade and of colleagues with whom grammar can be discussed in three languages at once.
September 9, 2026
Scientists Train Neural Network to Generate Process Plans from 3D Models
Researchers at the HSE FCS AI and Digital Science Institute have developed CAD2TechSpec, a framework that converts 3D models of mechanical parts into machining process plans—step-by-step instructions for machine tools. The solution aims to reduce the time required for the design and preparation of technical process documentation in mechanical engineering, aircraft manufacturing, and other high-tech industries. The study findings have been published in PeerJ Computer Science.
September 7, 2026
Biologists Discover 'Molecular Fingerprint' of Preeclampsia
Researchers at HSE University employed a new method to model hypoxia in placental cells during pregnancies complicated by preeclampsia and identified molecular markers of tissue hypoxia. Since hypoxia is one of the key mechanisms underlying preeclampsia, these findings are important for a more accurate and timely diagnosis of the disease and for the development of effective treatment methods. The paper has been published in Placenta.

 

Have you spotted a typo?
Highlight it, click Ctrl+Enter and send us a message. Thank you for your help!

Publications
  • Books
  • Articles
  • Chapters of books
  • Working papers
  • Report a publication
  • Research at HSE

?

Оценка влияния параметров структуры FinFET на электрические характеристики средствами TCAD-моделирования

С. 120–123.
Petrosyants K. O., Силкин Д. С., Popov D.

In this work, the influence of changes in the FinFET structure parameters, such as the dimensions of the gate stack layers, the shape of the fin or doping levels, on the electrical characteristics of the device is investigated with the TCAD modeling.

Language: Russian
Full text
DOI
Keywords: TCAD simulationTCAD-моделированиеFinFETFinFETstructure parametersпараметры структуры

In book

Математическое моделирование в материаловедении электронных компонентов МММЭК–2021
М.: МАКС Пресс, 2021.
Similar publications
Features of TCAD and SPICE Simulation of a Charged Particle Impact into a 6T SRAM Cell Manufactured Using the CMOS 28-nm Technology Node
Petrosyants K. O., Silkin D. S., D. A. Popov et al., Russian Microelectronics 2024 Vol. 53 No. 7 P. 737–743
With a decrease in the size of transistors, the conditions arise when the impact of one particle affects several transistors in the composition of a memory cell. Therefore, during simulation it is not sufficient to take into account one transistor directly hit by a particle. In this study, a full-size 3D model of two n-channel transistors ...
Added: November 6, 2025
Перераспределение примеси на границе поликремний — кремний при моделировании диффузии из поликремния в TCAD при различных моделях диффузии
Федотов А. В., Sambursky L. M., Наноиндустрия 2025 Т. 18 № S11-2(135) С. 859–861
The parameters of the polysilicon—silicon interface in the simulation of thermal processes significantly depend on the choice of the diffusion model available in TCAD. In this paper, based on experimental data, a comparison of the diffusion models available in TCAD in application to these materials is carried out and recommendations for choosing a model are ...
Added: November 5, 2025
Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling Tools
K. O. Petrosyants, D. S. Silkin, D. A. Popov, Russian Microelectronics 2022 Vol. 51 No. 8 P. 644–648
Using TCAD modeling, the effect of changing the FinFET structure parameters, such as gate stack layer sizes, fin shape, or doping levels, on the electrical characteristics of the device is studied. ...
Added: May 13, 2023
TCAD Modeling of Nanoscale FinFET Structures on Bulk Silicon, Taking into Account the Effects of Radiation
K. O. Petrosyants, D. S. Silkin, D. A. Popov et al., Russian Microelectronics 2022 Vol. 51 No. 7 P. 545–551
The transition from planar MOSFET structures to 3D FinFET structures provides resistance to various types of radiation. However, the characteristics of irradiated devices created at different manufacturers differ significantly, and it is rather difficult to explain the dependence of the radiation resistance of FinFE-T structures on variations in their physical and topological parameters and electrical ...
Added: January 30, 2023
Compact SPICE Models of Sub-100 nm FDSOI and FinFET Devices in the Wide Temperature Range (-269°C … + 300°C)
Konstantin O. Petrosyants, Mamed R. Ismail-zade, Sambursky L. M., , in: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2022. P. 1–4.
The temperature range of SPICE models of sub-100 nm FDSOI MOSFETs and FinFETs is extended from the standard commercial level (-60°C to +150 °C) to extreme low and high level (-200 °C … +300 °C) for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements ...
Added: December 15, 2022
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells
K.O. Petrosyants, D.S. Silkin, D.A. Popov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–4.
Added: July 13, 2022
Сравнение тепловых характеристик MOSFET и FinFET
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 4.: М.: ИППМ РАН, 2021. Гл. 86 С. 2–6.
Added: October 31, 2021
Проблемы TCAD-моделирования FinFET-структур с учетом радиационных эффектов
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисовТ. 14. Вып. 7s.: М.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 286–288.
Added: October 31, 2021
TCAD-моделирование нанометровых структур FinFET на объемном кремнии с учетом воздействия радиации
Petrosyants K. O., Силкин Д. С., Popov D. et al., Известия высших учебных заведений. Электроника 2021 Т. 26 № 5 С. 374–386
При переходе от планарных структур MOSFET к трехмерным структурам FinFET обеспечивается стойкость к разным видам облучения. Однако характеристики облученных приборов, созданных на разных предприятиях-изготовителях, существенно различаются, и объяснить зависимость радиационной стойкости структур FinFET от вариаций их физико-топологических параметров и электрических режимов достаточно сложно. В работе разработана радиационная версия TCAD-модели МОП-транзистора со структурой FinFET на объемном ...
Added: October 31, 2021
  • About
  • About
  • Key Figures & Facts
  • Sustainability at HSE University
  • Faculties & Departments
  • International Partnerships
  • Faculty & Staff
  • HSE Buildings
  • HSE University for Persons with Disabilities
  • Public Enquiries
  • Studies
  • Admissions
  • Programme Catalogue
  • Undergraduate
  • Graduate
  • Exchange Programmes
  • Summer University
  • Summer Schools
  • Semester in Moscow
  • Business Internship
  • Research
  • International Laboratories
  • Research Centres
  • Research Projects
  • Monitoring Studies
  • Conferences & Seminars
  • Academic Jobs
  • Yasin (April) International Academic Conference on Economic and Social Development
  • Media & Resources
  • Publications by staff
  • HSE Journals
  • Publishing House
  • iq.hse.ru: commentary by HSE experts
  • Library
  • Economic & Social Data Archive
  • Video
  • HSE Repository of Socio-Economic Information
  • HSE1993–2026
  • Contacts
  • Copyright
  • Privacy Policy
  • Site Map
Edit