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Сравнение тепловых характеристик MOSFET и FinFET

Гл. 86. С. 2–6.
Petrosyants K. O., Силкин Д. С., Popov D.
Language: Russian
Full text
DOI
Keywords: саморазогревMOSFETself-heatingTCAD simulationTCAD-моделированиеFinFETFinFETМОПТ

In book

Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)
Вып. 4. , М.: ИППМ РАН, 2021.
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Added: November 6, 2025
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With a decrease in the size of transistors, the conditions arise when the impact of one particle affects several transistors in the composition of a memory cell. Therefore, during simulation it is not sufficient to take into account one transistor directly hit by a particle. In this study, a full-size 3D model of two n-channel transistors ...
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In this work, the influence of changes in the FinFET structure parameters, such as the dimensions of the gate stack layers, the shape of the fin or doping levels, on the electrical characteristics of the device is investigated with the TCAD modeling. ...
Added: October 31, 2021
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Added: October 31, 2021
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