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September 11, 2026
How to Assess Students Knowledge in the Age of AI
A researcher at HSE University has proposed a flowchart to help lecturers decide how to assess students who use artificial intelligence. It shows where the use of AI should be restricted and where it can be incorporated into the learning process. The article has been published in IT Professional.
September 9, 2026
‘Balkan Hospitality Opens Doors: Studying Dialects on the Verge of Extinction
You cannot study spoken dialects from books. Instead, you need to go to a village, seek out its elders, and earn the trust of local residents before you can record hours of spontaneous stories. This is how Natalia Muravleva, Associate Professor at the Faculty of Humanities, conducts her research. Her internship in Serbia continued her long-standing study of dialects spoken by Macedonian settlers. In this interview, she discusses how diaspora cultural centres help researchers reach informants, why native speakers need to be interviewed only in their own language (otherwise, as she puts it, they may 'break'), and how a single field season helped her finalise her monograph. She also shares warm memories of autumn in Belgrade and of colleagues with whom grammar can be discussed in three languages at once.
September 9, 2026
Scientists Train Neural Network to Generate Process Plans from 3D Models
Researchers at the HSE FCS AI and Digital Science Institute have developed CAD2TechSpec, a framework that converts 3D models of mechanical parts into machining process plans—step-by-step instructions for machine tools. The solution aims to reduce the time required for the design and preparation of technical process documentation in mechanical engineering, aircraft manufacturing, and other high-tech industries. The study findings have been published in PeerJ Computer Science.

 

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Исследование характеристик и разработка моделей цифровых микросхем серии IN74AC04 с учетом низкоинтенсивного облучения

Гл. 2. С. 10–16.
Kharitonov I. A., Куликов Н. А., Zviagintsev D. V.
Language: Russian
Full text
Keywords: SPICE модельКМОП и БиКМОП интегральные схемынизкоинтенсивное излучение

In book

Вопросы атомной науки и техники. Серия: Физика радиационного воздействия на радиоэлектронную аппаратуру
Вопросы атомной науки и техники. Серия: Физика радиационного воздействия на радиоэлектронную аппаратуру
Лыткарино МО: АО "НИИП", 2020.
Similar publications
Измерение и моделирование влияния низкоинтенсивного излучения на цифровые КМОП ИС
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020
Компактные SPICE-модели элементов КМОП и БиКМОП СБИС, работающих в экстремальных условиях
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 402–403
The paper presents a library of radiation and electrothermal BJT and MOSFET VLSI SPICE models. The library contains models for MOSFET, SOI/SOS MOSFET, Si BJT, SeGe HBT taking into account self-heating, high (up to +300°C) and low (up to –200°C) temperatures, the influence of radiation (neutrons, electrons, γ- and X-ray, protons, pulsed radiation, single particles). ...
Added: January 30, 2019
An Efficient Approach to Simulation of Radiation Effects in bipolar and MOSFET IC’s using Non-Specialized SPICE Simulators
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in: 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017).: Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1–3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Учёт влияния импульсного ионизирующего воздействия в SPICE-моделях биполярных транзисторов и диодов
Petrosyants K. O., Sambursky L. M., Kharitonov I. A. et al., В кн.: Твердотельная электроника. Сложные функциональные блоки РЭА. Материалы XIV научно-технической конференции Москва, 7-9 октября 2015 г.: М.: ОАО НПП «ПУЛЬСАР», 2015. С. 239–243.
В данной работе предлагаются уточненные, но достаточно простые SPICE модели импульсных фототоков для диодов и биполярных транзисторов. Модели имеют единую структуру, учитывают электрическое смещение на p-n-переходе, особенности формы отклика конкретного полупроводникового прибора. Параметры моделей определяются из результатов испытаний на моделирующих установках. ...
Added: February 16, 2016
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