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Regular version of the site

Book chapter

TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures

P. 2-8.

Two types of the MOSFET models available in commercial versions of TCAD and SPICE simulators are completed with additional equations taking into account radiation effects. The adequacy of the models is demonstrated on two examples 1) 0.2 um and 0.24 um SOI/DSOI MOSFETs considering TID effects and single heavy ion impact, and 2) 28 nm bulk MOSFET, 45 nm and 28 nm high-k gate SOI MOSFETs considering TID effects.