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Regular version of the site

Book chapter

Modeling of the Submicron MOSFETs Characteristics for UTSi Technology

P. 1-6.
Adonin A. S., Petrosyants K. O., Popov D.

New SOS MOSFET design with the presence of high-resistance undoped silicon of intrinsic conductivity in the channel
region near the source was proposed. 0.75 μm SOS MOSFET with the use of an "insertion" makes it possible to obtain
the transistor with characteristics corresponding to a transistor with 0.5 μm topological channel length. This allows the
factories to produce new competitive products without significant capital expenditures for the modernization of
production capacities.





In book

Edited by: V. F. Lukichev, K. V. Rudenko. Vol. 11022G. SPIE, 2019.