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SPICE-model of SiGe HBT Taking into Account Radiation Effects

Ch. 380. P. 1–4.
Petrosyants K. O., Kozhukhov M., Dvornikov O., Savchenko E., Budyakov A.

A unified SPICE macromodel of the SiGe HBTs taking into account radiation effects is presented. It consists of two parts: 1) the standard core model (GP, VBIC, HICUM, MEXTRAM) selected by the designer; 2) an additional subcircuit taking into account the radiation-induced current and voltage shifts. The macromodel was included on SPICE-like simulators. The advantages of SPICE-RAD version of HBT model are: 1) high accuracy of description for device characteristics; 2) convenience to use for IC designers; 3) simplicity of parameter determination. The I-V characteristics of SiGe HBTs irradiated by gamma-rays, protons, neutrons, electrons are measured and simulated.  The error for static characteristics is 10-15% and for dynamic characteristics is 15–20% in wide range of doses and/or fluencies.

Language: English
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DOI
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Keywords: SiGe ГБТрадиационные эффектыradiation effectsSiGe HBTcomputer aided designсхемотехнические САПРSpice modelsSPICE макромодель
Publication based on the results of:
Complex modeling of interconnected electro-thermal, electromagnetic, photoelectric and radiation effects and phenomena in micro- and nanoelectronic devices, circuits and systems (2018)

In book

2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings
M.: IEEE, 2018.
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