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Generalized Test Automation Method for MOSFET’s Including Characteristics Measurements and Model Parameters Extraction for Aero-Space Applications

P. 504–511.
Petrosyants K. O., Sambursky L. M., Kharitonov I. A., Ismail-zade M. R.

In this work features of measurement, processing and analysis of electrical characteristics of MOSFET’s subjected to various kinds of static irradiation (neutron, electron, and 􀈖-rays) and temperature in the extended high/low ranges are analyzed. As a result a unified (with account for radiation and temperature) automated measurement, parameters extraction and modeling system is developed, which presents a unified environment for a user. Examples are given of the system usage for estimation of integrated and discrete power MOSFET radiation/temperature hardness and their SPICE model parameters extraction.

Language: English
Full text
DOI
Keywords: model parameter extractionрадиационные эффектыавтоматизация измеренийradiation effectsМОП-транзисторыкомпактные SPICE-моделиэкстракция параметров SPICE-моделейautomation of measurementsMOSFET'stemperature effectsspice-modelingтемпературные эффекты

In book

Proceedings of XV IEEE East-West Design & Test Symposium (EWDTS'2017)
Piscataway: IEEE, 2017.
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