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  • Схемотехнические SPICE модели элементов БИС, учитывающие радиационные эффекты
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Схемотехнические SPICE модели элементов БИС, учитывающие радиационные эффекты

С. 281–283.
Petrosyants K. O.
Language: Russian
Full text
Keywords: биполярные транзисторырадиационные эффектыМОП-транзисторыSPICE-моделиэкстракция параметров моделисхемотехнические САПР

In book

Международной форум "Микроэлектроника-2016". 2-я научная конференция "Интегральные схемы и микроэлектронные модули"
Международной форум "Микроэлектроника-2016". 2-я научная конференция "Интегральные схемы и микроэлектронные модули"
М.: Техносфера, 2016.
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Petrosyants K. O., Kozhukhov M., Popov D. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 5 С. 640–657
The operational amplifiers (Op-Amps) are widely used in electronic systems operating under conditions of exposure to ionizing radiation; hence the IC designer has a need to carry out circuit modeling considering radiation factors. The main problem of this method of the Op-Amps simulation is that in SPICE-like programs there are no adequate models of bipolar ...
Added: November 6, 2025
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Added: September 16, 2025
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The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
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Added: November 5, 2021
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History Published since 1990 Subject External radiation operating conditions of products of electronics and radio-electronic equipment Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment Calculation methods of determination of radiation resistance of products Test installations and accelerators, ...
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Added: April 11, 2021
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Added: December 19, 2020
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Added: December 5, 2020
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SOI MOSFETs have the worst properties of heat removal from an active region, which negatively affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating effect in the following structures of deeply submicron MOSFETs with different configurations of buried oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI structure, UTBB ...
Added: March 24, 2020
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