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April 30, 2026
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Исследование активных областей на основе многопериодных сверхрешеток GaAsN/InAs

Физика и техника полупроводников. 2022. Т. 56. № 10. С. 1002–1010.
Бабичев А. В., Пирогов Е. В., Соболев М. С., Денисов Д. В., Fominykh N., Баранов А. И., Гудовских А. С., Мельниченко И. А., Юнин П. А., Неведомский В. Н., Токарев М. В., Бер Б. Я., Гладышев А. Г., Карачинский Л. Я., Новиков И. И., Егоров А. Ю.

The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of dark-field images obtained by transmission electron microscopy showed the presence of interdiffusion of InAs into GaAsN. The results of a study of the photoluminescence and electroluminescence spectra at different pump levels are presented. Efficient electroluminescence is demonstrated near 1150 nm with a full width at half-maximum of about ~90 meV. Keywords: Superlattices, molecular beam epitaxy, gallium arsenide, dilute nitride, GaAsN, InAs.

Research target: Nanotechnologies Physics
Language: Russian
DOI
Text on another site
Keywords: сверхрешеткимолекулярно-пучковая эпитаксияmolecular beam epitaxygallium arsenideInAsInAsdilute nitrideGaAsNSuperlatticesарсенид галлияразбавленный нитридGaAsN
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)
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