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September 22, 2026
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Исследование фотолюминесценции в системе InGaAs/GaAs с квантовыми точками спектрального диапазона 1100 нм

Физика и техника полупроводников. 2023. Т. 57. № 1. С. 63–70.
Бабичев А. В., Komarov S., Ткач Ю. С., Неведомский В. Н., Blokhin S., Kryzhanovskaya N., Гладышев А. Г., Карачинский Л. Я., Новиков И. И.

 The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6monolayers were formed by molecular-beam epitaxy according to the Stransky– Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 nm to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing.

Research target: Physics Nanotechnologies
Language: Russian
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Keywords: молекулярно-пучковая эпитаксияInGaAsарсенид галлиямеханизм Странски–Крастанова
Publication based on the results of:
Investigation of the characteristics of micro- and nanolasers based on A3B5 semiconductor heterostructures of various quantum dimensions (2023)
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