Влияние состава волноводного слоя на излучательные параметры лазерных гетероструктур InGaAlAs/InP спектрального диапазона 1550 нм
Физика и техника полупроводников. 2022. Т. 56. № 9. С. 933-939.
Новиков И. И., Няпшаев И. А., Гладышев А. Г., Андрюшкин В. В., Бабичев А. В., Карачинский Л. Я., Шерняков Ю. М., Денисов Д. В., Kryzhanovskaya N., Zhukov A., Егоров А. Ю.
, , et al., Micro and Nanostructures 2022 Vol. 167 Article 207288
The effect of current drag of photons is experimentally investigated in the mid-infrared spectral range corresponded to the intersubband optical electron transitions in GaAs/AlGaAs quantum wells at room temperature for the first time. The optical electron transitions between the first and second electron subbands in quantum wells are revealed in light absorption spectra in the mid-infrared range. The dependences of the ...
Added: July 5, 2022
, , et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.3 P. 157-162
The paper reports on the implementation of two-level lasing in injection microlasers with self-organized InAs/GaAs quantum dots. Emission bands related to the radiative electron-hole recombination involving ground and several excited states of quantum dots are observed in the spontaneous electroluminescence spectra. We investigated two-level lasing via the ground and first excited states of quantum dots ...
Added: July 3, 2023
Фотолюминесценция ближнего ИК-диапазона в квантовых ямах n-GaAs/AlGaAs с различным положением компенсирующей акцепторной примеси
, , et al., Научно-технические ведомости Санкт-Петербургского государственного политехнического университета. Физико-математические науки 2022 Т. 15 № 4 С. 32-43
In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed. The PL spectra recorded at 5 K for different intensities of interband optical pumping were analyzed and main channels of radiative recombination were determined. The dependences of the main PL line intensities ...
Added: July 3, 2023
Photoluminescence properties of InAs quantum dots overgrown by a low-temperature GaAs layer under different arsenic pressures
, , et al., Electronics 2022 Vol. 11 No. 23 Article 4062
We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size distribution of quantum dots. Meanwhile, two distinct peaks (~1080 and ~1150 nm) ...
Added: December 13, 2022
, , et al., Физика и техника полупроводников 2022 Т. 56 № 1 С. 97-100
The electroluminescence spectra of waveguiding structures based on quantum well-dots were investigated with polarization resolution in the temperature range of 60−300 K. It is found that the ground state emission consists of two peaks with different degrees of TE-polarization and these peaks are getting closer with temperature decrease. We attribute the bimodality to the existence ...
Added: October 4, 2022
Submicron-Size Emitters of the 1.2–1.55 um Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate
, , et al., Nanomaterials 2022 Vol. 12 No. 23 Article 4213
We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach based on selective area growth and driven by a molten alloy in metal–organic vapor epitaxy method. This approach provides the selective-area synthesis of the ordered emitters arrays on Si substrates. The ...
Added: December 14, 2022
, , et al., Journal of Luminescence 2024 Vol. 266 Article 120302
Terahertz (THz) luminescence in doped nanostructures with GaAs/AlGaAs quantum wells is studied under conditions of interband optical pumping. The study is carried out on compensated quantum wells with different doping profiles. In one structure, compensation is carried out directly in each quantum well by introducing donors and acceptors with the same concentration. In the other, ...
Added: November 12, 2023
, , et al., Journal of Optical Technology (A Translation of Opticheskii Zhurnal) 2022 Vol. 89 No. 5 P. 298-301
Subject of study. The dependence of the photoluminescence of a flexible film structure, which is an array of InP/InAsP/InP nanowires incorporated into a polymerized trioctylphosphine oxide layer with CdSe/ZnS colloidal quantum dots, on the intensity of excitation in the near-infrared range at room temperature was investigated in this study.Method. Nanowires were synthesized on a Si (III) substrate by ...
Added: September 26, 2022
Stochastic superflares of photoluminescence from a single microdiamond with germanium-vacancy color centers: A general phenomenon or a unique observation
, , et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 102 Article 060301
We report the discovery of a GeV-associated phenomenon which is strong (up to an order) stochastic reversible enhancements of photoluminescence intensity in a single GeV diamond synthesized with the high-pressure, high-temperature technique. We were lucky to observe this effect with only one crystal among dozens of similar microdiamonds. Each rise and fall of the intensity ...
Added: February 4, 2021
, , et al., Физика и техника полупроводников 2021 Т. 55 № 8 С. 699-703
Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. ...
Added: October 14, 2021
, , et al., Journal of the American Ceramic Society 2019 Vol. 102 No. 5 P. 2745-2751
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does ...
Added: February 8, 2019
Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures
, , et al., Journal of Luminescence 2021 Vol. 239 Article 118393
The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with 1550 nm range strained quantum wells have been studied. The heterostructures had nine In0.74Ga0.26As quantum wells which were separated by In0.53Al0.20Ga0.27As barriers. The barriers were δ-doped with n- and p-type dopants with different layer concentrations of charge carriers. The both p-type and n-type doping of barriers leads to slight ...
Added: August 30, 2021
Анализ внутренних оптических потерь вертикально-излучающего лазера спектрального диапазона 1.55 μm, сформированного методом спекания пластин
, , et al., Оптика и спектроскопия 2019 Т. 127 № 7 С. 145-149
The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained InGaAs/InAlGaAs quantum wells have been presented. It has been shown that the proposed design ...
Added: December 9, 2020
, , et al., Физика металлов и металловедение 2021 Т. 122 № 9 С. 933-939
In this work, by the method of matrix synthesis, nanowires (NPs) of various types were obtained - from pure cobalt, from an alloy of cobalt with copper and layer structures consisting of alternating layers of cobalt and copper of various thicknesses. Structural features of the arrays have been investigated by the method of nuclear magnetic ...
Added: November 12, 2021
Энергопотребление при высокочастотной модуляции неохлаждаемого InGaAs/GaAs/AlGaAs-микродискового лазера
, , et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Comparing energy dissipation mechanisms within the vortex dynamics of gap and gapless nano-sized superconductors
, , et al., / Cornell University. Series cond-mat "arxiv.org". 2022. No. 2209.
The presence of magnetic fields and/or transport currents can cause penetration of vortices in superconductors. Their motion leads to dissipation and resistive state arises, which in turn strongly affects the performance of superconducting devices such as single-photon and single-electron detectors. Therefore, an understanding of the dissipation mechanisms in mesoscopic superconductors is not only of fundamental ...
Added: November 7, 2022
, , et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
Увеличение оптической мощности микродисковых лазеров InGaAs/GaAs, перенесенных на кремниевую подложку методом термокомпрессии
, , et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots
, , et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.2 P. 25-30
This paper is the first study of the far-field patterns of semiconductor microlasers with an active region based on In0.4Ga0.6As/GaAs quantum well-dots. A theoretical model describing the far-field radiation pattern is developed. It is shown that in the vertical direction the radiation pattern has a narrow beam divergence (the most of the power is confined ...
Added: March 15, 2023
Influence of a nonuniform thermal quench and circular polarized radiation on spontaneous current generation in superconducting rings
, , Physical Review B: Condensed Matter and Materials Physics 2022 Vol. 105 No. 2 Article L020504
We theoretically study the nonequilibrium dynamics of the order parameter of a superconducting ring inhomogeneously quenched through its transition temperature. Numerical simulations based on spectral decomposition of the time-dependent Ginzburg-Landau equation reveal that current-carrying superconducting states can be generated in the ring under certain fast local temperature quench conditions. We also show that illumination of ...
Added: December 10, 2022
, , et al., IEEE Journal of Quantum Electronics 2020 Vol. 56 No. 5 P. 1-8
We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical power limited by the thermal rollover effect, the corresponding injection current and excess temperature of the device. The ...
Added: July 30, 2020
, , et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 345-349
At the moment, millimeter waves attract close attention not only of the scientific community, but also of the communication industry. Number of studies worldwide are currently focused on finding efficient solutions for the transceiver technologies compatible with beamforming and carrier frequencies beyond 100 GHz. It was recently demonstrated that the technology of integrated silicon photonic ...
Added: May 11, 2023
, , et al., Nanoscale 2022 Vol. 14 No. 5 P. 1978-1989
Molecular magnetism and specifically magnetic molecules have recently gained plenty of attention as key elements for quantum technologies, information processing, and spintronics. Transition to the nanoscale and implementation of ordered structures with defined parameters is crucial for advanced applications. Single-walled carbon nanotubes (SWCNTs) provide natural one-dimensional confinement that can be implemented for encapsulation, nanosynthesis, and ...
Added: June 19, 2022
, , et al., Journal of Physics: Conference Series 2020 Vol. 1695 No. 1 Article 012154
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, ...
Added: May 18, 2022