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May 25, 2026
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1.3 μm optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region

Laser Physics Letters. 2022. Vol. 19. No. 7. Article 075801.
Kryzhanovskaya N., Likhachev A. I., Blokhin S., Blokhin A. A., Pirogov E. V., Sobolev M. S., Babichev A. V., Gladyshev A. G., Karachinsky L. Y., Novikov I. I.

Неre we report a monolitic long-wavelength vertical cavity surface-emitting laser based on GaAs with bottom GaAs/AlGaAs distributed Bragg reflectors (DBRs), metamorphic optical cavity with In0.41Ga0.59As/In0.25Ga0.75As-active region providing emission near 1.3 μm with high modal optical gain and top dielectric SiO2/Ta2O5 DBRs. We achieve continious wave single-mode operation at room temperature under optical pumping. The proposed approach has potential for high output power and high temperature (up to 200 °C) stable operation.

Research target: Physics Nanotechnologies
Language: English
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Keywords: Bragg reflectorsVCSELБрэгговский отражательВил
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)
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