Synthesis and optical properties of heterogeneous film structure based on InP/InAsP/InP nanowires
Subject of study. The dependence of the photoluminescence of a flexible film structure, which is an array of
InP/InAsP/InP nanowires incorporated into a polymerized trioctylphosphine oxide layer with CdSe/ZnS colloidal
quantum dots, on the intensity of excitation in the near-infrared range at room temperature was investigated
in this study.Method. Nanowires were synthesized on a Si (III) substrate by molecular beam epitaxy using a Riber
Compact 21 setup. A polymerized film formed after application of a colloidal solution of trioctylphosphine oxide
and CdSe/ZnS quantum dots in toluene on the substrate. This film could be easily detached from the substrate.
A continuous YLF:Nd+3 laser with a wavelength of 527 nm acted as an excitation source in
spectral measurements. The emission power varied in the range of 15–100mW.Main results. A method for fabrication
of a flexible film structure comprising an array of semiconductor nanowires and colloidal quantum dots was
demonstrated. A nonlinear dependence of the photoluminescence intensity on the intensity of exciting radiation
was obtained. It was attributed to the light quenching effect. A mechanism for the increase in the photoluminescence
intensity in the film structure is proposed. Practical significance. Considering the position of the maximum
in the photoluminescence band in the vicinity of 1.3 mkm, the proposed film heterostructure can be advantageous
for integration with fiber-optic systems.