Инфракрасные (850 нм) светодиоды с множественными InGaAs квантовыми ямами и «тыльным» отражателем
Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector has been optimized and the increase of the IR radiation reflection coefficient up to 92−93% has been achieved. Lightemitting diodes with the external quantum efficiency of 28.5% have been fabricated.