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  • SPICE-модели для учета радиационных и низкотемпературных эффектов в суб-100 нм МОП-транзисторных структурах

Article

SPICE-модели для учета радиационных и низкотемпературных эффектов в суб-100 нм МОП-транзисторных структурах

Наноиндустрия. 2020. Т. 13. № S5-2. С. 386-392.

Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and the introduction of additional analytical functions for radiation- / temperature-dependent parameters. The capabilities of the developed SPICE models and the procedure for identifying parameters are illustrated by examples of simulation of the IV‑curves of sub-100 nm MOSFETs.