Increasing the Charge Stability of Gate Dielectric Films of MIS Structure by Doping Them with Phosphorus
In the paper we demonstrate that the thermal doping of SiO2 film by phosphorus, causing formation of thin film of phospho-silicate glass on its surface, allows to rise charge stability of gate dielectric of MIS structure. We have ascertained that a presence of the film of phospho-silicate glass has given a possibility to significantly lower local injection currents flowing within defects because of electron capturing by traps located in the film of phospho-silicate glass what results in the rising of energy barrier. As a result, amount of the structures that comes to a state of breakdown at low values of charge injected into the dielectric under high fields noticeably reduces. We show that heating processes of injected electrons lowers in the films of phospho-silicate glass and this results in increasing of charge stability of the gate dielectric under high-field injection.
It has been shown that both RF plasma and plasma-jet treatments lead to electron traps formation in the bulk of SiO2 films. As a result it is possible to increase breackdown voltage of MOS structure when breakdown probability is being decreased significantly.
The inuence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) lm in the structures with the two-layer gate dielectric SiO2-PSG under high-eld FowlerNordheim electron injection can be used for the characteristics modication of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are oered to use for improving the reliability and nding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric lms of MOS-structures due to structural changes in the SiO2 lm and Si-SiO2 interface.
It has been shown that the increase of charge stability of MDS-systems can be achieved by optimal choosing the thickness of dielectric films of silicon dioxide and phosphorous soda-lime glass.
In the paper it has been researched diffusion of phosphorus in thermal SiO2 films on MIS structure and influence of the process on charge effects in gate dielectric and at interfaces at Fowler-Nordheim high-field tunnel injection of electrons.
Mechanical performances of titanium biomedical implants manufactured by superplastic forming are strongly related to the process parameters: the thickness distribution along the formed sheet has a key role in the evaluation of post-forming characteristics of the prosthesis. In this work, a finite element model able to reliably predict the thickness distribution after the superplastic forming operation was developed and validated in a case study. The material model was built for the investigated titanium alloy (Ti6Al4V-ELI) upon results achieved through free inflation tests in different pressure regimes. Thus, a strain and strain rate dependent material behaviour was implemented in the numerical model. It was found that, especially for relatively low strain rates, the strain rate sensitivity index of the investigated titanium alloy significantly decreases during the deformation process. Results on the case study highlighted that the strain rate has a strong influence on the thickness profile, both on its minimum value and on the position in which such a minimum is found.
The ХХV International scientific – technical conference “Foundry 2018” was held of the 18-20 April 2018 at “Rostov” hotel in the city of Pleven, Bulgaria. Its aim is to provide a meeting place for scholars from different countries to present their scientific achievements and to discuss the problems of casting production.
The structural and spectroscopic features of the EuAl3(BO3)4 individual skeletal microcrystals synthesized by a melt solution method have been studied. Their infrared spectra taken from the as-grown microcrystal surfaces mainly contain the lines of the rhombohedral modification of EuAl3(BO3)4 and additional peaks of its monoclinic modification. TEM and X-ray diffraction studies confirm that these additional peaks in the IR spectra belong to the monoclinic C2/c polytype of the EuAl3(BO3)4 compound. We are the first to demonstrate the presence of coherent monoclinic domains in rhombohedral EuAl3(BO3)4 crystals by TEM. Cathodoluminance spectroscopy shows that the microcrystals generate strong emission lines in the range 580–630 nm, and their intensities are strongly influenced by the crystal orientation.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.