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Regular version of the site

Article

Increasing the Charge Stability of Gate Dielectric Films of MIS Structure by Doping Them with Phosphorus

Inorganic Materials: Applied Research. 2021. Vol. 12. No. 2. P. 517-520.
Andreev D. V., Bondarenko G.G., Andreev V. V., Stolyarov A. A.

In the paper we demonstrate that the thermal doping of SiO2 film by phosphorus, causing formation of thin film of phospho-silicate glass on its surface, allows to rise charge stability of gate dielectric of MIS structure. We have ascertained that a presence of the film of phospho-silicate glass has given a possibility to significantly lower local injection currents flowing within defects because of electron capturing by traps located in the film of phospho-silicate glass what results in the rising of energy barrier. As a result, amount of the structures that comes to a state of breakdown at low values of charge injected into the dielectric under high fields noticeably reduces. We show that heating processes of injected electrons lowers in the films of phospho-silicate glass and this results in increasing of charge stability of the gate dielectric under high-field injection.