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Regular version of the site

Article

Study of waveguide absorption in InGaAs ”quantum well-dots” heterostructures

Nadtochiy A., Максимов М. В., Zhukov A. E.

Electronic states in a novel type of quantum-size heterostructures referred to as InGaAs quantum welldots
(QWDs) were experimentally studied using absorption in stripe waveguides of different lengths
based on a single, double, five, and ten QWD layers. The value of the modal absorption was measured
to be 70 cm−1 and 90 cm−1 for ground-state transition and high-energy one, respectively. The structure
of electronic states in the QWDs is also analyzed by polarization-resolved waveguide absorption and
the dependence of a polarization degree on the chip length is discussed. TM polarization of the heavyhole-
based optical transition photoresponse observed in the long waveguides is attributed to the light
depolarization due to the scattering on the QWD heterointerfaces.