Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation
We insert and manipulate a single chlorine atom in chlorine monolayer on a Si(100)-2 × 1 surface using a scanning tunneling microscope. Two objects were created—a Cl atom in a groove between two dimer rows, and bridge-bonded Cl on a silicon dimer. Changing the voltage polarity leads to conversion of the objects into each other. Anisotropic movement of the objects at 77 K is mediated by two different diffusion mechanisms: hopping and crowdion-like motion. Insertion of a Cl atom in a groove between two dimer rows leads to the formation of a dangling bond on a third-layer Si atom. At positive sample voltage bias, the first object is positively charged while the second object can be neutral or negatively charged depending on silicon sample doping.
This edition presents abstracts of the reports of the Meeting and Youth Conference on Neutron Scattering and Synchrotron Radiationin Condensed Matte (NSSR-CM-2014)r
Diffusion transport of material sputtered from the surface of the powered electrode in the asymmetric alternating current discharge is theoretically studied. It is shown that amplitudes of the non-stationary component of the sputtered atom (SA) flow densities at the electrodes depend on the discharge frequency and two dimensionless parameters, which are functions of the SA mass, its mean free path length in the background gas and the distance between the electrodes. It is found that diffusion damping of the time-varying component of the SA number density takes place in the discharge volume under certain conditions and their flows at the electrodes can be considered as time-independent.
This issue provides abstracts of XIII International Conference «Silicon – 2020» and XII Young Scientists Scholarship participants presentations devoted to the actual problems of silicon electronics and nano-devices. Presentations touch issues of advanced electronic elements, their fabrication processes and the way of application. Beside traditional topics of silicon bulk, surface and interface interaction influence upon semiconductor devices properties the Book presents some novel themes like research and development of neuromorphic networks as a basic part for artificial intelligence systems. Quantum dots models and research for optoelectronics and photonics benefit are presented as well. As a real applications presentation for electronics model generation and automation design system development may be found.
Silicon single crystals were studied by X-ray topo-tomography using laboratory sources. Experimental set up is described. Three-dimensional distribution of defect regions in the crystal were obtained.
At present particular attention is given to techniques which allow the monitoring of single layer and multilayer thin film materials directly during their formation - in-situ methods. Application of these methods helps to ensure a film with desired characteristics, allowing quickly adjust process conditions. The paper describes the possibilities of the in-situ X-ray reflectivity to determine the parameters of nanoscale films in real time of their formation. Experimental results on the magnetron deposition of nanoscale Si films and other materials on silicon substrates are presented.
The book is an introduction to the qualitative theory of dynamical systems on manifolds of low dimension (on the circle and on surfaces). Along with classical results, it reflects the most significant achevements in this area obtained in recent times. The reader of this book need to be familiar only with basic courses in differential equations and smooth manifolds.
The structure of silicon crystals implanted with protons was studied by methods of high-resolution X-ray diffraction . The distribution of strain in the disturbed layers was analyzed.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.