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Regular version of the site

Article

Features of Stationary Photoconductivity of High-Ohmic Semiconductors Under Local Illumination

Russian Physics Journal. 2018. Vol. 60. No. 12. P. 2209-2217.
Lysenko A. P., E. A. Odintsova, Белов А. Г., Каневский В. Е.

Photoconductivity has been thoroughly studied for a long time. However, most researchers have examined

photoconductivity of semiconductors while illuminating the entire surface of samples. The present paper

examines the effect of local exposure that ensures a high level of injection of free charge carriers upon the

conductivity of high-ohmic cadmium telluride and semi-insulating gallium arsenide samples and upon the

properties of ohmic contacts to samples. The authors found that regardless of the exposure area the value of

transition resistance of ohmic contacts decreases and the concentration of the main charge carriers increases

in the sample in proportion to radiation intensity. This research uncovered a number of previously unknown

effects that are interesting from the physical point of view. This paper focuses on discussing these effects.