ОСОБЕННОСТИ СТАЦИОНАРНОЙ ФОТОПРОВОДИМОСТИ ВЫСОКООМНЫХ ПОЛУПРОВОДНИКОВ ПРИ ЛОКАЛЬНОМ ОСВЕЩЕНИИ
The phenomenon of photoconductivity has long been well studied. However, in the overwhelming majority of studies, the photoconductivity of semiconductors was studied by illuminating the entire surface of the samples. In this paper we investigated the effect of local illumination, which ensures a high level of injection of free charge carriers on the conductivity of samples of high-resistance cadmium telluride and semi-insulating gallium arsenide and on the properties of ohmic contacts to the samples. It is found that irrespective of the illumination region, the value of the transient resistance of ohmic contacts decreases, and the concentration of the main charge carriers increases in proportion to the intensity of irradiation in the sample. In these studies, a number of previously unknown effects, interesting from the point of view of physics, have been revealed, and this work is devoted to the discussion.