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Влияние длины молекул поверхностных лигандов на оптические свойства и фотопроводимость конденсатов квантовых точек PbS
Письма в Журнал технической физики. 2017. Т. 43. № 19. С. 21-27.
Звайгзне М. А., Александров Е. А., Самохвалов П. С., Мартынов И. Л., Лыпенко Д. А., Tameev A., Никитенко В. Р., Чистяков А. А.
Nadtochiy A., Максимов М. В., Mintairov S. et al., Physica Status Solidi (B): Basic Research 2018 Vol. 255 No. 9 Article 1800123
Dense arrays of carrier localizing indium-rich regions (referred to as quantum
well-dots, QWDs) formed inside an indium-depleted residual quantum well
by metalorganic vapor phase epitaxial deposition of 4–16 monolayers (ML) of
InxGa1xAs (0.3<x<0.5) on 6 misoriented GaAs (100) substrates are
studied. It is shown that in addition to QWDs the deposited layers may
contain other objects with size and shape ...
Added: March 16, 2021
Irgashev R., Kazin N., Makarova N. et al., Dyes and Pigments 2017 Vol. 141 P. 512-520
New 3-(1H-imidazol-2-yl)-9H-carbazoles and 6,60-di(1H-imidazol-2-yl)-9H,90H-3,30-bicarbazoles have been prepared, starting from 9-ethyl-9H-carbazole-3-carbaldehyde or 9,90-diethyl-9H,90H-[3,30-bicarbazole]-6,60-dicarbaldehyde through their reactions with 4-methoxyaniline or 4-fluoroaniline, benzil or 2,20-thenil [1,2-di(thien-2,20-yl) glyoxal] and ammonium acetate on reflux in glacial acetic acid. The obtained compounds have been shown to demonstrate an effective fluorescence in the blue spectral region, exhibiting quantum yields in the range ...
Added: October 7, 2017
Zhukov A., Applied Physics B: Lasers and Optics 2018 Vol. 124 No. 2 Article 21
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, ...
Added: March 16, 2021
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Nadtochiy A., Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 4 С. 42-45
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures
of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD
structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current
density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and
0.9 cm–1), respectively. ...
Added: March 16, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10-13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Kryzhanovskaya N., Zhukov A., Moiseev E. et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for
creating compact, energy-efficient light sources (microlasers) for various applications owing to
their small footprints, high Q factors, planar geometry, in-plane light emission, and high
sensitivity to the environment. In this review we present the most recent advances in III–V
microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators
and discuss ...
Added: September 3, 2021
Malov V. V., Tameev A. R., Novikov S. V. et al., Organic Photonics and Photovoltaics 2015 Vol. 3 No. 1 P. 156-160
Optical and photoelectric properties of modern photosensitive polymers are of great interest due to their prospects for photovoltaic applications. In particular, an investigation of absorption and photoconductivity edge of these materials could provide valuable information. For these purpose we applied the constant photocurrent method which has proved its efficiency for inorganic materials. PCDTBT and PTB7 ...
Added: November 20, 2015
Khrebtov A. I., Kulagina A. S., Danilov V. V. et al., Journal of Optical Technology (A Translation of Opticheskii Zhurnal) 2022 Vol. 89 No. 5 P. 298-301
Subject of study. The dependence of the photoluminescence of a flexible film structure, which is an array of
InP/InAsP/InP nanowires incorporated into a polymerized trioctylphosphine oxide layer with CdSe/ZnS colloidal
quantum dots, on the intensity of excitation in the near-infrared range at room temperature was investigated
in this study.Method. Nanowires were synthesized on a Si (III) substrate by ...
Added: September 26, 2022
Natalia A. Lozing, Maxim G. Gladush, Eremchev I. et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 102 Article 060301
We report the discovery of a GeV-associated phenomenon which is strong (up to an order) stochastic reversible enhancements of photoluminescence intensity in a single GeV diamond synthesized with the high-pressure, high-temperature technique. We were lucky to observe this effect with only one crystal among dozens of similar microdiamonds. Each rise and fall of the intensity ...
Added: February 4, 2021
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Vinnichenko M. Y., Makhov I., Ustimenko R. V. et al., Micro and Nanostructures 2022 Vol. 169 Article 207339
The results of comprehensive studies of near-infrared photoluminescence and mid-infrared equilibrium and photoinduced absorption spectra in structures with Ge/Si quantum dots with different doping levels at different optical pumping intensities and different temperatures are presented. Obtained dependences of interband photoluminescence spectra on temperature and optical pumping intensity are explained by the change in the intensities of direct and indirect in real space electron-hole ...
Added: September 5, 2022
Kagan M.Yu., Val’kov V. V., Aksenov S. V., Physical Review B: Condensed Matter and Materials Physics 2017 Vol. 95 No. 035411 P. 1-11
We present an analytical and numerical investigation of the spectral and transport properties of a quadruple quantum-dot (QQD) structure which is one of the popular low-dimensional systems in the context of fundamental quantum physics study, future electronic applications, and quantum calculations. The density of states, occupation numbers, and conductance of the structure were analyzed using ...
Added: January 17, 2017
Novikov I., Nadtochiy A., Potapov A. Y. et al., Journal of Luminescence 2021 Vol. 239 Article 118393
The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with
1550 nm range strained quantum wells have been studied. The heterostructures had nine In0.74Ga0.26As quantum
wells which were separated by In0.53Al0.20Ga0.27As barriers. The barriers were δ-doped with n- and p-type
dopants with different layer concentrations of charge carriers. The both p-type and n-type doping of barriers
leads to slight ...
Added: August 30, 2021
Bondarenko G.G., Fisher M. R., Kristya V. I., Vacuum 2016 Vol. 129 P. 188-191
A model of the low-current (Townsend) discharge in argonemercury mixture in the presence of a thin insulating oxide film on the cathode is developed. It takes into account the cathode ion-electron emission and the electron emission from the cathode metal substrate under the strong electric field generated in the film by the ion surface charge. ...
Added: June 29, 2016
Chistyakov A., Zvaigzne M., Nikitenko V. et al., The Journal of Physical Chemistry Letters 2017 Vol. 8 No. 17 P. 4129-4139
Quantum dot (QD) solids represent a new type of condensed matter drawing high fundamental and applied interest. Quantum confinement in individual QDs, combined with macroscopic scale whole materials, leads to novel exciton and charge transfer features that are particularly relevant to optoelectronic applications. This Perspective discusses the structure of semiconductor QD solids, optical and spectral ...
Added: October 7, 2017
Юрасов Д. В., Байдакова Н. А., Verbus V. A. et al., Физика и техника полупроводников 2019 Т. 53 № 10 С. 1360-1365
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Moiseev E., Максимов М. В., Kryzhanovskaya N. et al., Физика и техника полупроводников 2020 Т. 54 № 2 С. 212-216
The results are presented on a comparative analysis of spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx µm with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold ...
Added: September 30, 2020
Жуков А. Е., СПб. : ПОЛИТЕХ-ПРЕСС, 2019
Пособие включает в себя учебные материалы по физике и технологии полупроводниковых квантовых точек и лазеров на основе квантовых точек, включая микролазеры. Квантовые точки – это новая разновидность полупроводниковых квантоворазмерных структур (наноструктур), в которых движение носителей заряда ограничено во всех трех направлениях. Возникающая в результате размерного квантования модификация плотности состояний, а также большая энергия локализации носителей ...
Added: February 10, 2020
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Kukushkin I., Vankov A., Solovyev V., Applied Physics Letters 2015 No. 106 P. 082102-1-082102-4
Low-temperature photoluminescence and reflectance measurements were employed to study the
optical transitions present in two-dimensional electron systems confined at MgxZn1–xO/ZnO heterojunctions.
Transitions involving A- and B-holes and electrons from the two lowest subbands formed
within the confinement potential are detected. In the studied density range of 2.0–6.51011cm2,
the inter-subband splitting is measured and the first excited electron subband is ...
Added: October 21, 2016
Yurasov D. V., Baidakova N. A., Verbus V. A. et al., Semiconductors 2019 Vol. 53 No. 10 P. 1324-1328
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 11 С. 3-7
The performance of quantum dot microdisk lasers operating at room temperature without thermal stabilization was experimentally investigated, and the highest modulation bandwidth of microdisks of various diameters was calculated. It is shown that taking into account the self-heating effect of the microlaser at high bias currents, which manifests itself in a decrease in the maximum ...
Added: May 25, 2020