Majorana state on the surface of a disordered three-dimensional topological insulator
We study low-lying electron levels in an “antidot” capturing a coreless vortex on the surface of a three-dimensional topological insulator in the presence of disorder. The surface is covered with a superconductor film with a hole of size R larger than coherence length, which induces superconductivity via proximity effect. Spectrum of electron states inside the hole is sensitive to disorder, however, topological properties of the system give rise to a robust Majorana bound state at zero energy. We calculate the subgap density of states with both energy and spatial resolution using the supersymmetric σ model method. We identify the presence of the Majorana fermion with symmetry class B. Tunneling into the hole region is sensitive to the Majorana level and exhibits resonant Andreev reflection at zero energy.
We propose a setup involving Majorana bound states (MBS) hosted by a vortex on a superconducting surface of a 3D topological insulator (TI). We consider a narrow channel drilled across a TI slab with both sides covered by s-wave superconductor. In the presence of a vortex pinned to such a channel, it acts as a ballistic nanowire connecting the superconducting surfaces, with a pair of MBS localized in it. The energies of the MBS possess a 4π-periodic dependence on the superconductive phase difference φ between the surfaces. It results in the appearance of an anomalous term in the current-phase relation Ia(φ) for the supercurrent flowing along the channel between the superconductive surfaces. We have calculated the shape of the 4π-periodic function Ia(φ), as well as the dependence of its amplitude on temperature and system parameters.
We study tunneling spectroscopy of subgap Andreev states in a superconducting system and discuss the general situation when the discrete nature of these levels is relevant and thus the standard semiclassical result for tunneling conductance being proportional to the density of states is not applicable. If the tunneling coupling is weak, individual levels are resolved and the conductance G(V) at low temperatures is composed of a set of resonant Lorentz peaks which cannot be described within perturbation theory over tunneling strength. We establish a general formula for the peak widths and heights and show that the width of any peak scales as normal-state tunnel conductance, while its height is 2e2 h−1 and depends only on contact geometry and the spatial profile of the resonant Andreev level. We also establish an exact formula for the single-channel conductance that takes the whole Andreev spectrum into account, and use it to study the interference of Andreev reflection processes through different levels. We study tunneling conductance at finite bias G(eV >0) for a system with a pair of almost decoupled Majorana fermions and derive the conditions for the 'universal' zero-bias peak with the height 2e2/h to be observed in a realistic system which always hosts an even number of Majorana fermions.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
By using superconducting quantum interference device (SQUID) magnetometry, we investigated anisotropic high-field (H less than or similar to 7T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d(c) similar or equal to 1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5-2T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. In addition, the inhomogeneous nanoisland FeNi films can possess spontaneous ordering of toroidal moments, which can be either of orbital or spin origin. The system with toroidal inhomogeneity can lead to anomalously strong diamagnetic-like response. The observed magnetization response is determined by the interplay between the paramagnetic-and diamagnetic-like contributions.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.