The increase of charge stability of dielectric films of MDS-systems
It has been shown that the increase of charge stability of MDS-systems can be achieved by optimal choosing the thickness of dielectric films of silicon dioxide and phosphorous soda-lime glass.
Special features of sputtering of the cathode with a thin dielectric film of variable thickness in a glow discharge are studied. It is shown that the flux density of atoms sputtered from the cathode is maximal on its sections with minimal film thickness due to focusing of ion flux caused by the violation of the electric field uniformity near the cathode surface. As a result, the non-uniformity of the film thickness increases with time, thereby leading to the formation of pores in the film.
Dielectric films and siliconinsulator interfaces in metalinsulatorsemiconductor (MIS) structures are modified using injectionthermal treatment, which involves highfield injection of a specified charge into the gate dielectric and subsequent annealing of the structure. The effect of the injectionthermal treatment modes on the MIS structure modification is investigated. The injectionthermal treatment is shown to reduce imperfection of the dielectric films and, thus, enhance reliability of the MIS devices. It is established that the MIS structure modification processes occurring at the injectionthermal treatment are largely identical to those occurring at the radiation thermal treatment; therefore, for certain MIS devices, the radiation thermal treatment can be replaced by the injectionthermal one.
The charge state change of MOS structures with multilayer dielectric films SiO2–PSG under highfield injection modification at different temperatures is studied in this article. The effect of temperature on the thermal stability of the negative charge component used to adjust the threshold voltage of MOS transistors is investigated. It is found that the performance of the highfield injection modification of MOS structures in the mode of constant current at elevated temperatures increases not only the density of the trapped negative charge but also its thermally stable component.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.