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Regular version of the site

Article

Plasma and injection modification of the gate dielectric in MOS structures

Thin solid films. 2003. Vol. 427. No. 1-2. P. 377-380.
Bondarenko G.G., Andreev V. V., Maslovsky V. M., Stolyarov A. A., Drach V. E.

It has been shown that both RF plasma and plasma-jet treatments lead to electron traps formation in the bulk of SiO2 films. As a result it is possible to increase breackdown voltage of MOS structure when breakdown probability is being decreased significantly.