Plasma and injection modification of the gate dielectric in MOS structures
It has been shown that both RF plasma and plasma-jet treatments lead to electron traps formation in the bulk of SiO2 films. As a result it is possible to increase breackdown voltage of MOS structure when breakdown probability is being decreased significantly.
The method of elasstic recoils detection of deutrons and protons (ERDA) was used for the study of the accumulation and redistribution of hydrogen and deuterium atoms under the action of high-temperature deuterium plasma using of the "Plasma Focus" (PF-4) in an assembly of two Ni, Ti and Zr foils of high purity. It was found that when exposed to pulsed high-temperature plasma is a redistribution of the implanted deuterium and hydrogen gas impurities to great depths in the assemblies of the studied foils, considerably exceeding the ranges of deuterium ions (at their maximum speeds of up to 108 cm /s).
As in earlier studies, the observed phenomenon can be explained by: a) removal of the implanted hydrogen under the influence of powerful shock waves formed in the metal foil by pulsed deuterium plasma, and (or) the acceleration of the diffusion of hydrogen atoms under the influence of compression-dilatation waves in the front of a shock wave to the redistribution of hydrogen to great depths. A similar behavior is found in assemblies of two or three or more foils of nickel, vanadium, niobium, tantalum, different thicknesses, including assembly and foils of different materials, which have been well studied.
The inuence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) lm in the structures with the two-layer gate dielectric SiO2-PSG under high-eld FowlerNordheim electron injection can be used for the characteristics modication of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are oered to use for improving the reliability and nding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric lms of MOS-structures due to structural changes in the SiO2 lm and Si-SiO2 interface.
Assemblies of Ta|CD2| Ta|Ta |CD2|Ta|Ta and Nb|CD2|Nb foils were irradiated 30th pulses of high-argon plasma on the "Plasma Focus" (PF-4). After irradiation, all samples foils were investigated by the elastic scattering of the recoil nuclei of hydrogen and deuterium (ERDA) on both sides. It found redistribution of hydrogen and deuterium in stacks of foils. Experimental results for lung penetration ultradeep gaseous impurities: hydrogen and deuterium are explained based on the effects of shock waves on the foils and accelerated diffusion induced by an external force.
The behaviour and erosion of tungsten, copper and W-Cu composition under irradiation by high intensive hydrogen plasma have been investigated. The erosion coefficients of these materials have been determined. The importance of copper redepositions in the mechanism of sputtering and erosion of W-Cu composition has been emphasised.
The sputtering of a number of materials due to an intense polyenergetic flux of hydrogen particles has been investigated. The irradiation of pure tungsten, copper, aluminium, titanium, aluminium-lithium alloys, stainless steel and tungsten-copper composition has been carried out at particle flux densities of 1017-1018 cm~2 s~' and at fluences of 1020-1022 cm~2. Furthermore, W-Cu composition has been subjected to the effect of high-current plasma pulses for simulating the disruption heat loads in a thermonuclear reactor.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
By using superconducting quantum interference device (SQUID) magnetometry, we investigated anisotropic high-field (H less than or similar to 7T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d(c) similar or equal to 1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5-2T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. In addition, the inhomogeneous nanoisland FeNi films can possess spontaneous ordering of toroidal moments, which can be either of orbital or spin origin. The system with toroidal inhomogeneity can lead to anomalously strong diamagnetic-like response. The observed magnetization response is determined by the interplay between the paramagnetic-and diamagnetic-like contributions.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.