Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters

Russian Microelectronics. 2014. Vol. 43. No. 8. P. 587–589.

Смирнов И. С., Новоселова Е. Г., Монахов И. С., Egorov A. A.

Переводчик: A. Evseeva

The monitoring methods for measuring the film structure parameters in formation process, namely, the in situ methods, are currently of special significance. Their application provides obtaining the films with the given characteristics, which results in a fast correction of the technological modes. The possibilities of the in situ method of the X-ray reflectometry for defining the parameters of the nanodimensional films during their formation are discussed. The results are given of testing the magnetron deposition of the silicon films and other materials on the silicon substrate.

Ключевые слова: магнетронное осаждение, in-situ x-ray reflectivity, in-situ рентгеновская рефлектометрия, кремний, silicon, magnetron deposition