Bimolecular Recombination of Charge Carriers in Polar Amorphous Organic Semiconductors: Effect of Spatial Correlation of the Random Energy Landscape

Journal of Physical Chemistry C. 2018. Vol. 122. P. 22856–22863.

Новиков С. В.

We present a simple model of the bimolecular charge carrier recombination in polar amorphous organic semiconductors in which the dominant part of the energetic disorder is provided by permanent dipoles and show that the recombination rate constant could be much smaller than the corresponding Langevin rate constant. The reason for the strong decrease of the rate constant is the long-range spatial correlation of the random energy landscape in amorphous dipolar materials; without spatial correlation, even strong disorder does not modify the Langevin rate constant. Our study shows that the signi fi cant suppression of the bimolecular recombination could take place in homogeneous amorphous organic semiconductors and does not need large-scale inhomogeneity of the material.

Ключевые слова: бимолекулярная рекомбинация, bimolecular recombination, пространственные корреляции энергетического ландшафта, Spatial correlations of the energy landscape, amorphous semiconductors, аморфные полупроводники

ПУБЛИКАЦИЯ ПОДГОТОВЛЕНА ПО РЕЗУЛЬТАТАМ ПРОЕКТА: Исследование механизмов радиационной и пост-радиационной электропроводности ароматических полиимидов и молекулярно допированных полимеров (2018)