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1.3 μm optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region
Laser Physics Letters. 2022. Vol. 19. No. 7. Article 075801.
Kryzhanovskaya N., Likhachev A. I., Blokhin S., Blokhin A. A., Pirogov E. V., Sobolev M. S., Babichev A. V., Gladyshev A. G., Karachinsky L. Y., Novikov I. I.
Неre we report a monolitic long-wavelength vertical cavity surface-emitting laser based on GaAs with bottom GaAs/AlGaAs distributed Bragg reflectors (DBRs), metamorphic optical cavity with In0.41Ga0.59As/In0.25Ga0.75As-active region providing emission near 1.3 μm with high modal optical gain and top dielectric SiO2/Ta2O5 DBRs. We achieve continious wave single-mode operation at room temperature under optical pumping. The proposed approach has potential for high output power and high temperature (up to 200 °C) stable operation.
Blokhin S., Бабичев А. В., Карачинский Л. Я. et al., Квантовая электроника 2022 Т. 52 № 10 С. 878-884
Представлены результаты исследований характеристик вертикально-излучающих лазеров спектрального диапазона 1550 нм с активной областью на основе квантовых ям InGaAs, реализованных в рамках технологии спекания пластины. Токовое и оптическое ограничения обеспечиваются заращенным туннельным переходом n+/p+-InAlGaAs. В широком диапазоне температур лазеры с диаметром мезы заращенного туннельного перехода 7 мкм продемонстрировали эффективную одномодовую генерацию с фактором подавления боковых мод ...
Added: January 4, 2023
Babichev A., Blokhin S., Gladyshev A. et al., IEEE Photonics Technology Letters 2023 Vol. 35 No. 6 P. 297-300
High power single-mode wafer fused 1550 nm VCSELs with an active region based on InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular-beam epitaõy. The current and optical confinements are provided by a lateral-structured buried tunnel junction with ∼ 6 µm diameter and etching ...
Added: July 3, 2023
Малеев Н. А., Васильев А. П., Кузьменков А. Г. et al., Письма в Журнал технической физики 2019 Т. 45 № 21 С. 29-33
High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse ...
Added: December 8, 2020
Walls B., Murtagh O., Bozhko S. et al., Materials 2022 Vol. 15 No. 21 Article 7652
The strongly correlated electron material, vanadium dioxide (VO2), has seen considerable
attention and research application in metal-oxide electronics due to its metal-to-insulator transition
close to room temperature. Vacuum annealing a V2O5(010) single crystal results in Wadsley phases
(VnO2n+1, n > 1) and VO2. The resistance changes by a factor of 20 at 342 K, corresponding to the
metal-to-insulator phase ...
Added: December 11, 2022
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Lounis B., Buzdin A. I., Physical Review B: Condensed Matter and Materials Physics 2022 Vol. 105 No. 2 Article L020504
We theoretically study the nonequilibrium dynamics of the order parameter of a superconducting ring inhomogeneously quenched through its transition temperature. Numerical simulations based on spectral decomposition of the time-dependent Ginzburg-Landau equation reveal that current-carrying superconducting states can be generated in the ring under certain fast local temperature quench conditions. We also show that illumination of ...
Added: December 10, 2022
Novikov I., Nadtochiy A., Potapov A. Y. et al., Journal of Luminescence 2021 Vol. 239 Article 118393
The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with
1550 nm range strained quantum wells have been studied. The heterostructures had nine In0.74Ga0.26As quantum
wells which were separated by In0.53Al0.20Ga0.27As barriers. The barriers were δ-doped with n- and p-type
dopants with different layer concentrations of charge carriers. The both p-type and n-type doping of barriers
leads to slight ...
Added: August 30, 2021
Boldyrev K., Романов А., Хаула Е. et al., Journal of the American Ceramic Society 2019 Vol. 102 No. 5 P. 2745-2751
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does ...
Added: February 8, 2019
A. N. Prikhodko, I. I. Belikov, Lvov A. V. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 345-349
At the moment, millimeter waves attract close attention not only of the scientific community, but also of the communication industry. Number of studies worldwide are currently focused on finding efficient solutions for the transceiver technologies compatible with beamforming and carrier frequencies beyond 100 GHz. It was recently demonstrated that the technology of integrated silicon photonic ...
Added: May 11, 2023
N.A. Fominykh, F.I. Zubov, K.A. Ivanov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.2 P. 126-132
In the present work, we study the possibility of the emission output of a semiconductor microring laser through a radially coupled optical waveguide. Room temperature lasing has been achieved in continuous wave regime with the wavelength of ~1090 nm. The characteristics of microlasers with and without waveguide have been compared. We have performed a spatial ...
Added: July 3, 2023
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
E. I. Moiseev, N. V. Kryzhanovskaya, Zubov F. I. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.2 P. 25-30
This paper is the first study of the far-field patterns of semiconductor microlasers with an active region based on In0.4Ga0.6As/GaAs quantum well-dots. A theoretical model describing the far-field radiation pattern is developed. It is shown that in the vertical direction the radiation pattern has a narrow beam divergence (the most of the power is confined ...
Added: March 15, 2023
Чупраков С. А., Блинов И. В., Загорский Д. Л. et al., Физика металлов и металловедение 2021 Т. 122 № 9 С. 933-939
In this work, by the method of matrix synthesis, nanowires (NPs) of various types were obtained - from pure cobalt, from an alloy of cobalt with copper and layer structures consisting of alternating layers of cobalt and copper of various thicknesses. Structural features of the arrays have been investigated by the method of nuclear magnetic ...
Added: November 12, 2021
Duarte E. C., Sardella E., Teixeira Saraiva T. et al., / Cornell University. Series cond-mat "arxiv.org". 2022. No. 2209.
The presence of magnetic fields and/or transport currents can cause penetration of vortices in superconductors. Their motion leads to dissipation and resistive state arises, which in turn strongly affects the performance of superconducting devices such as single-photon and single-electron detectors. Therefore, an understanding of the dissipation mechanisms in mesoscopic superconductors is not only of fundamental ...
Added: November 7, 2022
Kartsev A., Lega P., Orlov A. et al., Nanomaterials 2022 Vol. 12 No. 7 Article 1107
Recently, Ti-Ni based intermetallic alloys with shape memory effect (SME) have attracted much attention as promising functional materials for the development of record small nanomechanical tools, such as nanotweezers, for 3D manipulation of the real nano-objects. The problem of the fundamental restrictions on the minimal size of the nanomechanical device with SME for manipulation is ...
Added: April 29, 2022
Kalmykov A., Melentiev P., Balykin V., Laser Physics Letters 2020 Vol. 17 No. 4 P. 045901
In this paper we present measurements and comparison of SPP propagation length at the practically important telecom wavelength (1560 nm) as well as in the near-infrared and visible spectral ranges. The measurements were carried out for plane SPP waves excited on Ag film surface using optical microscopy of SPP waves in the far field. We ...
Added: January 15, 2021
Pozina G., Hemmingsson C., Levitskii I. et al., Physica Status Solidi (A) Applications and Materials 2020 Vol. 217 No. 14 Article 1900894
Fabrication of microcavities based on III-nitrides is challenging due to difficulties with the coherent growth of heterostructures having a large number of periods, at the same time keeping a good precision in terms of thickness and composition of the alloy. A planar design for GaN microresonators supporting whispering gallery modes is suggested. GaN hexagonal microstructures ...
Added: October 9, 2021
Kryzhanovskaya N., Maximov M., Zhukov A. et al., Journal of Lightwave Technology 2015 Vol. 33 No. 1 P. 171-175
A dense array of InGaAs quantum dots formed by MOCVD on a misoriented GaAs substrate has been used as an active medium of microdisk resonators of various types: a cylindrical disk, an undercut disk, and a suspended disk. Single-mode room temperature lasing in a 9-μm microdisk laser is demonstrated with a dominant line around 1.13 ...
Added: September 30, 2020
Shurakov A., Moltchanov D., Prikhodko A. et al., Computer Communications 2023 Vol. 201 P. 48-58
Abstract: The next step in the last mile wireless access is utilization of the terahertz (THz) frequency band spanning from 0.1 to 3 THz, specifically, its lower part (up to 300 GHz) also known as sub-THz frequencies. At these frequencies, communication systems can offer tens of consecutive gigahertz potentially allowing to further improve access rates at the ...
Added: May 11, 2023
Budkov Y., Kalikin N., Physical Review E - Statistical, Nonlinear, and Soft Matter Physics 2023 Vol. 107 No. 2 Article 024503
In this paper, we present a self-consistent field theory of macroscopic forces in spatially inhomogeneous flexible chain polyelectrolyte solutions. We derive an analytical expression for a stress tensor which consists of three terms: isotropic hydrostatic stress, electrostatic (Maxwell) stress, and stress rising from conformational entropy of polymer chains—conformational stress. We apply our theory to the ...
Added: February 15, 2023
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., IEEE Journal of Quantum Electronics 2020 Vol. 56 No. 5 P. 1-8
We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical power limited by the thermal rollover effect, the corresponding injection current and excess temperature of the device. The ...
Added: July 30, 2020
Shurakov A., Mikhailov D., Belikov I. et al., Journal of Physics: Conference Series 2020 Vol. 1695 No. 1 Article 012154
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, ...
Added: May 18, 2022
Зубов Ф. И., Максимов М. В., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
I.V. Bobkova, Bobkov A. M., Silaev M. A., Journal of Physics: Condensed Matter 2022 Vol. 34 Article 353001
The review is devoted to the fundamental aspects and characteristic features of the magnetoelectric effects, reported in the literature on Josephson junctions (JJs). The main focus of the review is on the manifestations of the direct and inverse magnetoelectric effects in various types of Josephson systems. They provide a coupling of the magnetization in superconductor/ferromagnet/superconductor ...
Added: October 27, 2022