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Modeling InGaAs/InAlAs Spads as a Part of Single-Photon Detectors to Predict Their Electrical Parameters

Journal of Russian Laser Research. 2023. Vol. 44. P. 156–162.
Losev A. V., Filyaev A. A., Zavodilenko V. V., Gorbatsevich A. A.

We construct a model of InGaAs/InAlAs single-photon avalanche diodes in the T-CAD computing environment, in order to predict their electrical parameters, when they work as a part of single-photon detectors. The obtained results are applicable for optimizing the design of single-photon avalanche photodiodes for the use as sensitive elements in light detection devices. The main advantage of the developed model of InGaAs/InAlAs single-photon diodes is the fact that it can be integrated in the electrical control circuit of the single-photon detector to simulate the operation of the diode, which allows not only setting up the detector control system but also testing new circuit solutions.

Language: English
DOI
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Keywords: single-photon detectorsInGaAs/InAlAs single-photon avalanche diodesnumerical simulation of nanoscale processes
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